H. V. Asriyan

Semiconductor-metal interface influence on the bulk low-frequency noise behavior and role of the phonons refraction points

Vladimir M. Aroutiounian, A. A. Shatveryan, Ferdinand Gasparyan, 2005, SPIE International Symposium on Fluctuations and Noise.

Phonon mechanism of mobility equilibrium fluctuation and properties of 1/f-noise

Vladimir M. Aroutiounian, H. V. Asriyan, S. V. Melkonyan, 2006 .

SHORT OUTLINE OF SILICON MOS-LIKE STRUCTURES FABRICATION TECHNIQUES, CVC AND NOISE MEASUREMENTS

H. V. Asriyan, B. A. Noaman, C. Korman, 2008 .

1/f ‐ type Noise in View of Phonons Interface Percolation Dynamics

H. V. Asriyan, F. Gasparyan, V. Aroutiounian, 2005 .

Electrophysical and photoelectrical properties of UV-range injection structures made of silicon carbide

H. V. Asriyan, F. Gasparyan, V. Aroutiounian, 2001 .

Low-frequency noise in non-homogeneously doped semiconductor

H. V. Asriyan, F. Gasparyan, V. Aroutiounian, 2004 .

Main sources of electron mobility fluctuations in semiconductors

Ferdinand Gasparyan, H. V. Asriyan, S. V. Melkonyan, 2007, SPIE International Symposium on Fluctuations and Noise.