Irina Buyanova

发表

Spin depolarization in semiconductor spin detectors

Weimin Chen, Stephen J. Pearton, Irina Buyanova, 2006, SPIE OPTO.

Ferromagnetism in Transition-Metal Doped ZnO

David P. Norton, John M. Zavada, Stephen J. Pearton, 2007 .

Growth of isotopically enriched ZnO nanorods of excellent optical quality

Irina Buyanova, Joseph Cullen, Greg Hughes, 2015 .

Photoluminescence characterization of SF6–O2 plasma etching of silicon

Anne Henry, Irina Buyanova, Gottlieb S. Oehrlein, 1996 .

Mechanism for rapid thermal annealing improvements in undoped GaNxAs1−x/GaAs structures grown by molecular beam epitaxy

C. W. Tu, Irina Buyanova, P. N. Hai, 2000 .

On the origin of spin loss in GaMnN/InGaN light-emitting diodes

Guan-Ting Chen, John M. Zavada, Stephen J. Pearton, 2004 .

Efficient spin relaxation in InGaN∕GaN and InGaN∕GaMnN quantum wells: An obstacle to spin detection

Guan-Ting Chen, Stephen J. Pearton, Irina Buyanova, 2005 .

Photoluminescence of GaN: Effect of electron irradiation

Isamu Akasaki, Irina Buyanova, Hiroshi Amano, 1998 .

Photoluminescence characterization of SF6O2 plasma etching of silicon

Anne Henry, Irina Buyanova, Gottlieb S. Oehrlein, 1996 .

Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy

C. W. Tu, Irina Buyanova, Bo Monemar, 1999 .