K. Imai

Growth of high quality 4 in diameter Li2B4O7 single crystals

M. Ishii, N. Senguttuvan, N. Tsutsui, 2001 .

Growth of large size LBO (Li2B4O7) single crystals by modified Bridgman technique

M. Ishii, N. Senguttuvan, N. Tsutsui, 2000 .

The influence of oxygen at epitaxial Si/Si substrate interface for 0.1 /spl mu/m epitaxial Si channel N-MOSFETs grown by UHV-CVD

Hiroshi Iwai, Tatsuya Ohguro, Hisayo Sasaki Momose, 1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers.

Growth of 4-inch diameter Li/sub 2/B/sub 4/O/sub 7/ single crystals for SAW devices

N. Senguttuvan, M. Ishii, N. Tsutsui, 2000, 2000 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.00CH37121).

GROWTH OF 4-INCH DIAMETER Li2B407 SINGLE CRYSTALS FOR SAW DEVICES

N. Tsutsui, Y. Ino, K. Imai, 2000 .