Ju-chul Park

发表

Epitaxial C49–TiSi2 phase formation on the silicon (100)

K. Lim, Dae-gyu Park, Jun-Mo Yang, 2003 .

Effects of cobalt silicidation and postannealing on void defects at the sidewall spacer edge of metal–oxide–silicon field-effect transistors

Yeong-Cheol Kim, J. Choy, HongSock Choi, 1999 .

Minimizing optical loss in ultrathin Ag films based on Ge wetting layer: Insights on Ge-mediated Ag growth

J. Bae, J. Rha, J. Yun, 2020 .

Characterization on microstructures of tungsten/barrier metals (TiN,WNx)/silicon multilayer films

Yong Soo Kim, Jun-Mo Yang, Yil-Wook Kim, 2002 .

Chemical junction delineation of a specific site in Si devices.

Jun-Mo Yang, T. Park, Soun-Young Lee, 2004, Journal of Electron Microscopy.

Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films

I. Yoo, Myoung-Jae Lee, Chang Bum Lee, 2007 .

Observation of molecular nitrogen in N-doped Ge2Sb2Te5

Y. Ha, B. Kuh, J. Noh, 2006 .

Crystallographic and Interfacial Characterization of Al 2 O 3 and ZrO 2 Dielectric Films Prepared by Atomic Layer Chemical Vapor Deposition on the Si Substrate

Heung-Jae Cho, K. Lim, Dae-gyu Park, 2003 .