H. Fox

Quantifying the effects of uneven etching during the SIMS analysis of periodic doping structures grown by silicon MBE

W. Y. Leong, E. Parker, D. Mcphail, 1988 .

SIMS response functions for MBE grown delta layers in silicon

M. Dowsett, R. Kubiak, S. Newstead, 1992 .

Rapid automatic compensation for charging effects during the SIMS depth profiling of semiconductors

D. Mcphail, M. Dowsett, H. Fox, 1986 .

Secondary ion mass spectrometry depth profiling of boron, antimony, and germanium deltas in silicon and implications for profile deconvolution

M. Dowsett, R. Kubiak, R. Collins, 1992 .

Irradiation tests of double-sided silicon strip detectors with a special guard ring structure

R. Richter, H. Kroha, I. Abt, 1995, 1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record.