T. Isaacs-smith

发表

Thermally stable Schottky contacts on n-type GaN using ZrB 2

Pamela J. Martin, J. Lin, Hongxing Jiang, 2006 .

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

J. Williams, A. Adedeji, T. Oder, 2007 .

Self-regulated growth of candidate topological superconducting parkerite by molecular beam epitaxy

Lizhi Zhang, J. Zhang, M. Yoon, 2021, APL Materials.

POSS® Coatings as Replacements for Solar Cell Cover Glasses

H. Brandhorst, B. Fu, J. Lichtenhan, 2006, 2006 IEEE 4th World Conference on Photovoltaic Energy Conference.

Improved ohmic contact to n-type 4H and 6H-SiC using nichrome

M. Bozack, S. Mohney, J. Williams, 1998 .

Bonding, defects, and defect dynamics in the SiC-SiO2 system

L. Feldman, G. Chung, G. Duscher, 2000 .

MOS Characteristics of C-Face 4H-SiC

L. Feldman, J. Williams, A. Ahyi, 2010 .

Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors

D. Schroder, M. Marinella, M. Loboda, 2007 .

Sputter deposited ZnTe/ZnSe/ZnO heterojunctions for photovoltaic applications

S. Seraphin, T. Thompson, K. Das, 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

Low-loss cable-to-cable parallel connection method for thin-film superconducting flexible microwave transmission lines

John A. Sellers, M. Hamilton, D. Tuckerman, 2019, Superconductor Science and Technology.

Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate

Edward A. Preble, Jung-Hyun Park, Minseo Park, 2008 .

Structure and magnetic properties of electrodeposited Ni films on n-GaAs(001)

John R. Williams, G. Zangari, P. Evans, 2002 .

Incorporation of Ti in epitaxial Fe2TiO4 thin films

Xinmao Yin, R. Paudel, C. Tang, 2021, Journal of physics. Condensed matter : an Institute of Physics journal.

A new approach in impurity doping of 4H-SiC using silicidation

C. Tin, John R. Williams, T. Isaacs-Smith, 2013 .

An investigation of proton energy effects in SiGe HBT technology

John D. Cressler, Paul W. Marshall, Robert A. Reed, 2002 .

Improved Ni Schottky Contacts on n-Type 4H-SiC Using Thermal Processing

J. Williams, A. Ahyi, T. Oder, 2009 .

Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers

S. Dhar, G. Duscher, Y. Sharma, 2014 .

Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances

Leonard C. Feldman, L. Tsetseris, Robert A. Weller, 2006 .

Thin-Film Nb/Polyimide Superconducting Stripline Flexible Cables

John A. Sellers, M. Hamilton, D. Tuckerman, 2019, IEEE Transactions on Applied Superconductivity.

Impact of 150keV and 590keV proton irradiation on monolayer MoS2

B. Ozden, M. Terrones, Ke Wang, 2020, 2008.04895.

Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs

S. Dhar, A. Ahyi, Yongju Zheng, 2018, Materials Science Forum.

4H-SiC MOSFETs With Borosilicate Glass Gate Dielectric and Antimony Counter-Doping

S. Dhar, A. Ahyi, Yongju Zheng, 2017, IEEE Electron Device Letters.

Carrier Generation Lifetimes in 4H-SiC MOS Capacitors

D. Schroder, M. Marinella, M. Loboda, 2010, IEEE Transactions on Electron Devices.

Nickel Ohmic Contacts to N-Implanted (0001) 4H-SiC

J. Williams, T. Isaacs-Smith, A. Ahyi, 2010 .

Structural, transport, and ultrafast dynamic properties of V1−xNbxO2 thin films

S. Wolf, Mengkun Liu, Yue Ni, 2019, Physical Review B.

Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

S. Dhar, L. Feldman, Y. Sharma, 2013, IEEE Electron Device Letters.

Characterization of 4H-SiC MOS Capacitors by a Fast-Ramp Response Technique

C. Tin, T. Sudarshan, R. Hu, 1996 .

Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen

S. Dhar, L. Feldman, G. Chung, 2003 .

Thin PSG Process for 4H-SiC MOSFET

C. Fisher, S. Dhar, L. Feldman, 2014 .

Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC

J. R. Williams, Leonard C. Feldman, X. D. Chen, 2008 .

Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface

Leonard C. Feldman, Sokrates T. Pantelides, Tamara Isaacs-Smith, 2006 .

Interface trap passivation for SiO2∕(0001¯) C-terminated 4H-SiC

S. Dhar, L. Feldman, J. Williams, 2005 .

Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface

J. R. Williams, Leonard C. Feldman, Dmitri Starodub, 2004 .

Nitrogen passivation of deposited oxides on n 4H–SiC

L. Feldman, G. Chung, F. Ren, 2002 .

High conductivity β-Ga2O3 formed by hot Si ion implantation

S. Dhar, R. Comes, T. Asel, 2022, Applied Physics Letters.

Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs)

M. Bozack, T. Oh, A. Ahyi, 2018, Journal of Applied Physics.

Electro‐thermal stress and high electric field effects in CVD‐Grown 4H‐SiC P‐N junction diodes

D. Sheridan, J. Casady, C. Tin, 2008 .

Proton-induced displacement damage in ZnO thin film transistors: Impact of damage location

Michael C. Hamilton, Shiqiang Wang, Minseo Park, 2018, Microelectron. Reliab..

High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer

T. Isaacs-Smith, Y. K. Sharma, J. R. Williams, 2013, IEEE Electron Device Letters.

Chitosan solid electrolyte as electric double layer in multilayer MoS2 transistor for low‐voltage operation

S. Dhar, M. Kuroda, A. Ahyi, 2015 .

The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors

G. Chung, S. Clark, J. Cressler, 2002 .

High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching

S. Saddow, J. Casady, J. Cooper, 2000 .

Effective Refractory Metal Alloy Barrier Layer for High Temperature Microelectronic Device Application

A. Pradhan, A. Adedeji, A. Ahyi, 2013 .

A “Probe-Lift” MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

D. Schroder, M. Marinella, M. Loboda, 2008, IEEE Transactions on Electron Devices.

Control of etch pit density in low-pressure-grown 3C-SiC/Si by variation of reactor pressure

C. Tin, J. Park, E. Luckowski, 1996 .

10kV Trench Gate IGBTs on 4H-SiC

Q. Zhang, H.-R. Chang, M. Gomez, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC

S. Mohney, John R. Williams, T. Isaacs-Smith, 2002 .

Improved Nickel Silicide Ohmic Contacts to N-Type 4H and 6H-SiC Using Nichrome

M. Bozack, John R. Williams, J. Crofton, 1996 .

Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2

R. Gutmann, A. Agarwal, T. Chow, 2004 .

Channel mobility and threshold voltage characterization of 4H-SiC MOSFET with antimony channel implantation

S. Dhar, P. Mooney, A. Ahyi, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Engineering the Al-Ti/p-SiC Ohmic Contact for Improved Performance

S. Mohney, Junhong Lin, John R. Williams, 2000 .

Co2fe(Ti0 . 5al0 . 5) Epitaxial Thin Films: Structural and Magnetic Properties of a Heusler Alloy with Z-Site Transition Metal Substitution

T. Mewes, G. Thompson, P. Leclair, 2023, SSRN Electronic Journal.

Fabrication of self-aligned graded junction termination extensions with applications to 4H-SiC P-N diodes

T. Isaacs-Smith, J. R. Williams, D. Sheridan, 2002 .

The Influence of Contact Composition, Pretreatment, and Annealing Gas on the Ohmic Behavior of Ti/Al-Based Ohmic Contacts to n -Al 0.4 Ga 0.6 N

I. Ferguson, R. Birkhahn, S. Mohney, 2001 .