C. Pernot

发表

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output

Isamu Akasaki, Yoshio Honda, Masamichi Ippommatsu, 2017 .

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2010 .

Investigation of the Leakage Current in GaN P-N Junctions

H. Amano, I. Akasaki, A. Hirano, 1998 .

Improvement of Low‐Intensity Ultraviolet Photodetectors Based on AlGaN with Low Threading Dislocation Density

H. Amano, A. Hirano, M. Iwaya, 1999 .

Low-Intensity Ultraviolet Photodetectors Based on AlGaN

Theeradetch Detchprohm, Motoaki Iwaya, Isamu Akasaki, 1999 .

High-Quality AlxGa1−xN Using Low Temperature-Interlayer and its Application to UV Detector

H. Amano, I. Akasaki, A. Hirano, 2000 .

High-Quality Al x Ga 1−x N Using Low Temperature-Interlayer and its Application to UV Detector

H. Amano, A. Hirano, Nobuaki Hayashi, 1999 .

Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

Demonstration of Flame Detection in Room Light Background by Solar‐Blind AlGaN PIN Photodiode

Theeradetch Detchprohm, Motoaki Iwaya, Isamu Akasaki, 2001 .