Yoshitami Terakoshi

Structural investigation of sapphire surface after nitridation

M. Ishida, Tadao Hashimoto, O. Imafuji, 1998 .

Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition

M. Ishida, Tadao Hashimoto, O. Imafuji, 1999 .

Quantitative study of nitridated sapphire surfaces by x-ray photoelectron spectroscopy

M. Ishida, Tadao Hashimoto, O. Imafuji, 1999 .

Inheritance of zinc-blende structure from 3CSiCSi(001) substrate in growth of GaN by MOCVD

M. Ishida, Tadao Hashimoto, O. Imafuji, 1996 .

Growth of GaN Thin Films on Sapphire Substrate by Low Pressure MOCVD

M. Ishida, T. Sugino, J. Shirafuji, 1997 .