Jeong-Mo Yeon

The effect of p-GaN : Mg layers on the turn-on voltage of p-n junction LED

Cheul‐Ro Lee, H. Ahn, Daebeom Choi, 2001 .

Doping characteristics of Al0.15Ga0.85N epilayers with various Mg incorporations

Cheul‐Ro Lee, In‐Hwan Lee, B. Baek, 2003 .

The role of AlN buffer layer in AlxGa1-xN/GaN heterostructures with x from 0.35 to 0.5 grown on sapphire (0 0 0 1)

Yongjo Park, Cheul-Ro Lee, Jae-Young Leem, 2002 .

The influences of AlxGa1-xN layer on the characteristics of UV LED structure

Cheul‐Ro Lee, Yongjo Park, S. Son, 2001 .