K. Yamada

发表

Isotopic labeling study of the oxygen diffusion in HfO2∕SiO2∕Si

T. Chikyow, S. Kamiyama, K. Shiraishi, 2007 .

Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure

S. Kamiyama, Y. Nara, K. Torii, 2006 .

Mass Spectrometric Determination of Activity of Phosphorus in Liquid Fe-P Alloy

E. Kato, K. Yamada, 1979 .

Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures

Martin L. Green, T. Chikyow, K. Shiraishi, 2007 .

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2014, Microelectron. Reliab..

Si nanowire FET and its modeling

Hiroshi Iwai, Kenji Ohmori, Kuniyuki Kakushima, 2011, Science China Information Sciences.

Impact of High Temperature Annealing on Traps in Physical-Vapor-Deposited-TiN/SiO2/Si Analyzed by Positron Annihilation

A. Uedono, N. Mise, T. Eimori, 2007 .

(Invited) An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks

T. Chikyow, K. Yamabe, N. Fukata, 2010 .

Effect of Dilute Concentrations of Si, Al, Ti, V, Cr, Co, Ni, Nb and Mo on the Activity Coefficient of P in Liquid Iron

E. Kato, K. Yamada, 1983 .

Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates -A Theoretical Approach

Kazuyoshi Torii, Kiyomi Nakajima, Kenji Shiraishi, 2004 .

Characterization of Metal/High-k Structures Using Monoenergetic Positron Beams

A. Uedono, T. Chikyow, N. Umezawa, 2007 .

Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation

A. Uedono, T. Chikyow, N. Umezawa, 2006 .

Characterization of HfSiON gate dielectrics using monoenergetic positron beams

A. Uedono, T. Chikyow, N. Umezawa, 2006 .

Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams

A. Uedono, T. Chikyow, K. Yamabe, 2005 .

Effect of aSiO2layer on the thermal transport properties of〈100〉Sinanowires: A molecular dynamics study

Takanobu Watanabe, K. Ohmori, T. Zushi, 2015 .

The Standard Free Energies of Dissolution of Phosphorus Gases in Liquid Iron

E. Kato, L. L. Meshkov, K. Yamada, 1980 .

Electronic Structure Study of Local Dielectric Properties of Lanthanoid Oxide Clusters

H. Iwai, N. Umezawa, S. Sugino, 2008 .

Mass Spectrometric Determination of Activities of Phosphorus in Liquid Fe-P-Si, Al, Ti, V, Cr, Co, Ni, Nb, and Mo Alloys

E. Kato, K. Yamada, 1979 .

Uniformly dimerized C60 film prepared by deposition under in situ photoirradiation

H. Mizubayashi, H. Tanimoto, S. Sakai, 2008 .

Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures

K. Shiraishi, Y. Sakurai, K. Ohmori, 2011 .

Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths

T. Chikyow, N. Umezawa, S. Kamiyama, 2005 .

Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator

H. Koinuma, H. Kawarada, T. Chikyo, 2006 .

Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-k/Metal Gate Stack p-Type Metal–Oxide–Silicon Field Effect Transistors

K. Shiraishi, K. Yamabe, T. Aoyama, 2008 .

Physics of Metal/High-k Interfaces

T. Chikyow, N. Umezawa, K. Shiraishi, 2006 .

Reversible and irreversible degradation attributing to oxygen vacancy in HfSiON gate films during electrical stress application

A. Uedono, T. Chikyow, K. Shiraishi, 2009, International Electron Devices Meeting.

Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties

Y. Nara, Heiji Watanabe, K. Yasutake, 2005 .

Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams

A. Uedono, K. Shiraishi, K. Yamabe, 2004 .

Depth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100)

Y. Nara, S. Inumiya, S. Miyazaki, 2006 .

Chemical controllability of charge states of nitrogen-related defects inHfOxNy: First-principles calculations

T. Chikyow, N. Umezawa, K. Shiraishi, 2008 .

Effect of substrate bias on frequency dependence of MOSFET noise intensity

Kenji Ohmori, Keisaku Yamada, Ranga Hettiarachchi, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Behavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations

K. Ohmori, W. Feng, R. Hettiarachchi, 2011 .

(Invited) Degradation in HfSiON Film Induced by Electrical Stress Application

A. Uedono, T. Chikyow, K. Shiraishi, 2010 .

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

Hiroshi Iwai, Kenji Ohmori, Kuniyuki Kakushima, 2011, Microelectron. Reliab..

Hafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-k Gate Dielectrics

T. Chikyow, N. Umezawa, K. Shiraishi, 2007 .

Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2010 .

High-performance Si Nanowire FET with a semi gate-around structure suitable for integration

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Study of high-k gate dielectrics by means of positron annihilation

A. Uedono, T. Chikyow, N. Umezawa, 2007 .

Point defects in thin HfAlO x films probed by monoenergetic positron beams

A. Uedono, K. Yamabe, K. Torii, 2003 .

Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure.

H. Iwai, K. Shiraishi, K. Kakushima, 2014, Optics express.

Electron beam induced current investigation of stress-induced leakage and breakdown processes in high-k stacks

T. Chikyow, K. Yamabe, Y. Nara, 2009, IEEE International Reliability Physics Symposium.

K. Yamabe, Y. Nara, N. Fukata, 2009 .

Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current

K. Yamabe, Y. Nara, N. Fukata, 2008 .

Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs

K. Yamabe, N. Fukata, T. Sekiguchi, 2009 .

Tight Distribution of Dielectric Characteristics of HfSiON in Metal Gate Devices

A. Uedono, T. Chikyow, N. Umezawa, 2007 .

Schottky metal library for ZNO-based UV photodiode fabricated by the combinatorial ion beam-assisted deposition

T. Nagata, T. Chikyow, Y. Wada, 2006 .