R. Boujamaa

Advanced backside sample preparation for multi-technique surface analysis

J. Barnes, B. Pélissier, M. Veillerot, 2011 .

Impact of high temperature annealing on La diffusion and flatband voltage (Vfb) modulation in TiN/LaOx/HfSiON/SiON/Si gate stacks

R. Pantel, J. Zegenhagen, E. Martinez, 2012 .

Quantitative depth profiling of ultrathin high-k stacks with full spectrum time of flight–secondary ion mass spectrometry

J. Barnes, K. Kimura, K. Nakajima, 2011 .

Backside medium energy ion scattering study of the lanthanum diffusion in advanced gate stacks for the 32nm node

F. Bertin, J. Barnes, D. Jalabert, 2013 .

Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering

M. Gros-Jean, J. Zegenhagen, E. Martinez, 2015 .