S. Saintenoy

发表

Vacancy-induced electronic states in ErSi1.7(0001)

C. Pirri, L. Stauffer, D. Bolmont, 1997 .

STM investigation of 2- and 3-dimensional Er disilicide grown epitaxially on Si(111)

C. Pirri, D. Bolmont, J. Labrune, 1996 .

Observation of a temporal evolution of defected epitaxial erbium silicide layers at room temperature

C. Pirri, D. Bolmont, P. Wetzel, 1996 .

Initial growth mode of Er silicide on Si(111) by solid phase epitaxy

C. Pirri, D. Bolmont, J. Labrune, 1996 .

Interaction of H with epitaxial Er silicide layers on Si(111) : adsorption versus absorption

C. Pirri, D. Bolmont, P. Wetzel, 1996 .

Surface atomic structure and symmetry properties of ErSi1.7 on Si(111)

C. Pirri, L. Stauffer, D. Bolmont, 1996 .

Surface electronic structure of epitaxial √3 × √3R30° Er silicide on Si(111)

C. Pirri, D. Bolmont, P. Wetzel, 1995 .

Hydrogen adsorption on erbium silicide surface

C. Pirri, D. Bolmont, P. Wetzel, 1995 .

Symmetry properties of the ErSi1.7valence band states

C. Pirri, D. Bolmont, P. Wetzel, 1995 .

ELECTRONIC AND ATOMIC STRUCTURE OF TWO-DIMENSIONAL ERSI2 (1 X 1)-H ON SI(111)

C. Pirri, P. Sonnet, L. Stauffer, 1997 .

Highly Reliable 106 Gb/s PAM-4 850 nm Multi-Mode VCSEL for 800G Ethernet Applications

D. Quandt, S. Eitel, S. Saintenoy, 2022, 2022 Optical Fiber Communications Conference and Exhibition (OFC).