M. Chernov

发表

Effect of Strongly Mismatched GaAs and InAs Inserts in a InAlAs Buffer Layer on the Structural and Optical Properties of Metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs Quantum-Confined Heterostructures

V. A. Solov'ev, O. Komkov, S. Ivanov, 2019, JETP Letters.

Effect of design and stress relaxation on structural, electronic, and luminescence properties of metamorphic InAs(Sb)/In(Ga,Al)As/GaAs mid-IR emitters with a superlattice waveguide

V. A. Solov'ev, A. Andreev, O. Komkov, 2020 .

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

V. A. Solov'ev, P. Brunkov, O. Komkov, 2019, Progress in Crystal Growth and Characterization of Materials.

In situ study of elastic strain relaxation in metamorphic InAs(Sb)/In(Ga,Al)As/GaAs heterostructures by using reflection high energy electron diffraction

V. A. Solov'ev, S. Ivanov, N. Fominykh, 2019, Journal of Physics: Conference Series.

Radiative versus non-radiative recombination in high-efficiency mid-IR InSb/InAs/In(Ga,Al)As/GaAs metamorphic nanoheterostructures

V. A. Solov'ev, P. Kop’ev, O. Komkov, 2018 .

Enhanced room-temperature 3.5 µm photoluminescence in stress-balanced metamorphic In(Sb,As)/In(Ga,Al)As/GaAs quantum wells

V. A. Solov'ev, P. Kop’ev, O. Komkov, 2017 .

Peculiarities of the energy spectrum of InSb/InAs/InGaAs/InAlAs/GaAs nanoheterostructures revealed by room temperature photomodulation FTIR spectroscopy

V. A. Solov'ev, A. Andreev, O. Komkov, 2019, Japanese Journal of Applied Physics.

Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001)

V. A. Solov'ev, P. Brunkov, A. Sitnikova, 2018 .

InSb/InAs/InGa(Al)As/GaAs(0 0 1) metamorphic nanoheterostructures grown by MBE and emitting beyond 3 μm

V. A. Solov'ev, Ya. V. Terent’ev, P. Brunkov, 2017 .

Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range

V. A. Solov'ev, Ya. V. Terent’ev, A. Semenov, 2016 .

Distribution of Misfit Dislocations and Elastic Mechanical Stresses in Metamorphic Buffer InAlAs Layers of Various Constructions

V. A. Solov'ev, S. Ivanov, M. Chernov, 2021 .

Strain relaxation in convex-graded In x Al 1-x As (x = 0.05–0.79) metamorphic buffer layers grown by molecular beam epitaxy on GaAs(001)

V. A. Solov'ev, D. Kirilenko, P. Kop’ev, 2017 .

Stimulated Emission at a Wavelength of 2.86 μm from In(Sb, As)/In(Ga, Al)As/GaAs Metamorphic Quantum Wells under Optical Pumping

V. A. Solov'ev, S. Morozov, A. Sitnikova, 2019, JETP Letters.

Characterization of In(Ga,Al)As/GaAs metamorphic heterostructures for mid-IR emitters by FTIR photoreflectance spectroscopy

V. A. Solov'ev, O. Komkov, M. Chernov, 2021, Journal of Physics: Conference Series.

Electrical and optical properties of convex-type metamorphic In0.75Ga0.25As/In0.7Al0.3As quantum well structures grown by MBE on GaAs

V. A. Solov'ev, P. Brunkov, P. Kop’ev, 2017 .