Bernhard Stampfer

Physical modeling of the hysteresis in M0S2 transistors

Tibor Grasser, Thomas Muller, Gerhard Rzepa, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

Karl Rupp, Tibor Grasser, Ben Kaczer, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States

Tibor Grasser, Ben Kaczer, J. Franco, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies

Tibor Grasser, Michael Waltl, Bernhard Stampfer, 2021, Crystals.

Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors.

Feng Zhang, Tibor Grasser, Peng Wu, 2018, ACS nano.