E. Eld

A high-performance sub-0.25 /spl mu/m CMOS technology with multiple thresholds and copper interconnects

E. Crabbe, L. Su, R. Schulz, 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

A high-density 6.9 sq. /spl mu/m embedded SRAM cell in a high-performance 0.25 /spl mu/m-generation CMOS logic technology

Paul D. Agnello, Bomy A. Chen, E. Eld, 1996, International Electron Devices Meeting. Technical Digest.

SiGe HBT technology: device and application issues

S. Voinigescu, J. Malinowski, D. Sunderland, 1995, Proceedings of International Electron Devices Meeting.

ESD robustness of a BiCMOS SiGe technology

James S. Dunn, Bernard S. Meyerson, David L. Harame, 2000, Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124).

A 0.13 /spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT

P. Gray, J. Dunn, G. Freeman, 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).