P.H. Woerlee

Impact of process scaling on 1/f noise in advanced CMOS technologies

A.J. Scholten, M.J. Knitel, P.H. Woerlee, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

A record high 150 GHz f/sub max/ realized at 0.18 /spl mu/m gate length in an industrial RF-CMOS technology

D.B.M. Klaassen, L.F. Tiemeijer, R.J. Havens, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

A 25 mu m/sup 2/ bulk full CMOS SRAM cell technology with fully overlapping contacts

M. Vertregt, P.H. Woerlee, R.D.J. Verhaar, 1990, International Technical Digest on Electron Devices.

A novel high-density low-cost diode programmable read only memory

P.W.H. de Vreede, H. Lifka, P.H. Woerlee, 1996, International Electron Devices Meeting. Technical Digest.

Visible light emission from reverse-biased silicon nanometer-scale diode-antifuses

N. Akil, P.H. Woerlee, A. van den Berg, 1999, CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389).

Technology of the Diode Programmable Read Only Memory

P.W.H. de Vreede, H. Lifka, P.H. Woerlee, 1997, 27th European Solid-State Device Research Conference.