K. Yagi

发表

Effect of Hole-Doping in High-Tc Ln1Ba2Cu3O7-δ (Ln=Nd, La, Pr)

H. Asano, H. Uwe, M. Iha, 1988 .

Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching

C. Lin, K. Sasaki, M. Higashiwaki, 2018 .