K. Ahn

Giant Negative Magnetoresistance in GdI 2: Prediction and Realization

C. Felser, R. Seshadri, A. Simon, 1999 .

Impact of floating gate dry etching on erase characteristics in NOR flash memory

Kang-Deog Suh, Yonghan Roh, W.H. Lee, 2002, IEEE Electron Device Letters.

Mobile ion-induced data retention failure in NOR flash memory cell

K. Suh, Keonsoo Kim, K. Ahn, 2001 .

Data retention failure in NOR flash memory cells

K. Suh, Keonsoo Kim, W. Lee, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique

Woopyo Jeong, Geonu Kim, Yujin Yang, 2020, 2020 IEEE International Solid- State Circuits Conference - (ISSCC).

Influence of plasma edge damage on erase characteristics of NOR flash EEPROM using channel erase method

Kang-Deog Suh, Yonghan Roh, Woung-Moo Lee, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).