Y.S. Tsai

Drain biased TDDB lifetime model for ultra thin gate oxide

A. Oates, K. Wu, P.J. Liao, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

A new on-state drain-bias TDDB lifetime model and HCI effect on drain-bias TDDB of ultra thin oxide

K. Wu, P.J. Liao, Y.S. Tsai, 2008, 2008 IEEE International Reliability Physics Symposium.

Modeling of BTI-aging VT stability for advanced planar and FinFET SRAM reliability

Y.-H. Lee, J. H. Lee, Y.S. Tsai, 2017, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Reliability Assessment of the Embedded DRAM Technology with PMOSFET Transfer Transistor and High-K Dielectrics (Ta2O5) MIM Capacitor

J.R. Shih, Y.S. Tsai, H.W. Chin, 2006, 2006 International Symposium on VLSI Technology, Systems, and Applications.

Prediction of NBTI degradation for circuit under AC operation

R. Ranjan, J.R. Shih, Y.S. Tsai, 2010, 2010 IEEE International Reliability Physics Symposium.