Maxime Berthou

Experimental analysis of planar edge terminations for high voltage 4H-SiC devices

Philippe Godignon, J. Rebollo, Andrei Mihaila, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

State of art of current and future technologies in current limiting devices

Dominique Tournier, Maxime Berthou, Remy Ouaida, 2015, 2015 IEEE First International Conference on DC Microgrids (ICDCM).

Microstructure evolution observation for SAC solder joint: Comparison between thermal cycling and thermal storage

Alexandrine Guédon-Gracia, Hélène Frémont, Maxime Berthou, 2009, Microelectron. Reliab..

Temperature effects on the ruggedness of SiC Schottky diodes under surge current

Philippe Godignon, Xavier Jordà, X. Perpiñà, 2014, Microelectron. Reliab..

High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide

Philippe Godignon, Alberto Rodriguez, J. Rebollo, 2017, IEEE Transactions on Industrial Electronics.

Implementation of high voltage Silicon Carbide rectifiers and switches

Maxime Berthou, M. Berthou, 2012 .

Repetitive Short-Circuit Tests on SiC VMOS Devices

Pascal Bevilacqua, Dominique Tournier, Maxime Berthou, 2016 .

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

Philippe Godignon, Dominique Planson, Maxime Berthou, 2013 .

Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs

Philippe Godignon, Maxime Berthou, Jose Millan, 2014, IEEE Transactions on Power Electronics.