James S. Williams

发表

Ion Implantation and Beam Processing

J. Poate, James Williams, James S. Williams, 1984 .

The formation of ternary compound Fe3Mo3C by ball milling

A. Całka, Z. L. Li, James Williams, 1995 .

Hyperdoping of Si by ion implantation and pulsed laser melting

J. Mathews, Wenjie Yang, James S. Williams, 2017 .

Advances in ion beam modification of semiconductors

R. Elliman, James S. Williams, 2015 .

Structural characterization of B-doped diamond nanoindentation tips

M. Lockrey, James Williams, R. Major, 2011 .

Direct observation of irradiation-induced nanocavity shrinkage in Si

H. Bernas, James Williams, Xianfang Zhu, 2001 .

The damage dependence of the epitaxial regrowthrate during the annealing of amorphous siliconformed by ion implantation

D. G. Beanland, James S. Williams, 1978 .

Materials modification with ion beams

James Williams, James S. Williams, 1986 .

Ion-Beam-Defect Processes in Group-III Nitrides and ZnO

S. Kucheyev, C. Jagadish, James S. Williams, 2004 .

Damage Buildup in GaN under Ion Bombardment

Chennupati Jagadish, Jin Zou, Sergei O. Kucheyev, 2000 .

Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters

M. Swain, J. Wong-Leung, M. Swain, 1999 .

Rate-dependent phase transformations in nanoindented germanium

M. Swain, P. Munroe, James Williams, 2009 .

High-energy ball-milling-induced non-equilibrium phase transformations

Ying Chen, James S. Williams, 1997 .

High-temperature phase transformations of iron anhydrous ammonia system realized by ball milling at room temperature

James Williams, Ying Chen, G. Wang, 1996 .

Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

C. Jagadish, B. Johnson, J. McCallum, 2012 .

Analysis of semiconductors by ion channelling: Applications and pitfalls

H. Tan, J. Wong-Leung, J. Davies, 1998 .

Rutherford backscattering and channeling study of Au trapped at cavities in silicon

J. Wong-Leung, James S. Williams, 1996 .

PURIFICATION OF BORON NITRIDE NANOTUBES

James Williams, Ying Chen, Jun Yu, 2006 .

The role of Fe on the crystallisation of α-Si3N4 from amorphous Si–N formed by ion implantation

J. Wong-Leung, P. Deenapanray, J. Gerald, 1999 .

SIMS and depth profiling of semiconductor structures

B. Svensson, M. Linnarsson, M. Petravić, 1994 .

On the estimation of depth resolution during sputter profiling

B. Svensson, M. Petravić, James S. Williams, 1993 .

Gettering of copper to hydrogen‐induced cavities in silicon

R. Elliman, J. Wong-Leung, M. Petravić, 1995 .

Direct observation of voids in the vacancy excess region of ion bombarded silicon

J. Wong-Leung, M. Conway, B. Williams, 2001 .

Platinum atom location on the internal walls of nanocavities investigated by ion channeling analysis

Y. Horino, A. Kinomura, N. Tsubouchi, 2002 .

Voids and Nanocavities in Silicon

J. Wong-Leung, James S. Williams, 2009 .

In-situ microscopy study of nanocavity shrinkage in Si under ion beam irradiation

H. Bernas, James Williams, M. Ridgway, 2003 .

How Nanocavities in Amorphous Si Shrink Under Ion Beam Irradiation: An in situ Study

H. Bernas, James Williams, M. Ridgway, 2002 .

Interaction of defects and metals with nanocavities in silicon

H. Bernas, J. Wong-Leung, Xianfang Zhu, 2001 .

Interactions of Point Defects and Impurities With Open Volume Defects in Silicon

H. Bernas, J. Wong-Leung, M. Conway, 2010 .

Gettering of copper to hydrogen-induced cavities in multicrystalline silicon

James Williams, Y. Horino, A. Kinomura, 2005 .

Mass effects on regrowth rates and activation energies of solid-phase epitaxy induced by ion beams in silicon

A. Kinomura, K. Fujii, James S. Williams, 1999 .

Damage Formation, Amorphization and Crystallization in Semiconductors at Elevated Temperatures

James Williams, James S. Williams, 2016 .

Solid phase epitaxial growth of amorphized InP

R. Elliman, James Williams, J. Davies, 1991 .

The amorphization kinetics of GaAs irradiated with Si ions

R. Brown, James S. Williams, 1998 .

Flux and temperature dependence of amorphisation of GaAs irradiated with Si ions.

R. Brown, James S. Williams, 1996 .

Dynamic Annealing and Amorphous Phase Formation in Si, GaAs and AlGaAs Under Ion Irradiation

H. Tan, C. Jagadish, R. Brown, 1993 .

MeV ion-beam annealing of semiconductor structures

R. Elliman, J. Davies, M. Ridgway, 1991 .

The precipitation of Fe at the Si–SiO2 interface

J. Poate, D. Eaglesham, D. Jacobson, 1998 .

Gettering of platinum and silver to cavities formed by hydrogen implantation in silicon

J. Wong-Leung, A. Kinomura, M. Petravić, 1997 .

The role of oxygen on the stability of gettering of metals to cavities in silicon

D. Eaglesham, D. Jacobson, J. Wong-Leung, 1999 .

Instability of nanocavities in amorphous silicon

J. McCallum, Xiaohua Zhu, D. Llewellyn, 1999 .

Efficient gettering of low concentrations of copper contamination to hydrogen induced nanocavities in silicon

J. Wong-Leung, A. Kinomura, Y. Nakano, 1998 .

Ion implantation of semiconductors

James Williams, James S. Williams, 1998 .

Microstructural difference between platinum and silver trapped in hydrogen induced cavities in silicon

J. Wong-Leung, A. Kinomura, M. Petravić, 1998 .

The influence of cavities and point defects on boron diffusion in silicon

J. Wong-Leung, M. Petravić, James S. Williams, 1998 .

Instability of nanocavities in disordered and amorphous silicon under ion irradiation

J. McCallum, Xiaohua Zhu, James S. Williams, 1998 .

The Influence of Cavities and Point Defects on Cu Gettering and B'Diffusion in Si

J. Wong-Leung, M. Petravić, James S. Williams, 1997 .

Defect Evolution in Hydrogen Implanted Silicon

J. Wong-Leung, M. Petravić, C. Ascheron, 1996 .

Diffusion and trapping of Au to cavities induced by H-implantation in Si

J. Wong-Leung, E. Nygren, James S. Williams, 1995 .

Transient Diffusion and Gettering of Au and Cu to Cavities in Si

J. Wong-Leung, E. Nygren, James S. Williams, 1995 .

Measurement of the distribution of damage in ion implanted GaAs by differential reflectance spectroscopy

H. Tan, C. Jagadish, M. Gal, 1995 .

Giant pop-ins and amorphization in germanium during indentation

M. Swain, P. Munroe, J. Bradby, 2007 .

Gettering of Au to dislocations and cavities in silicon

J. Wong-Leung, E. Nygren, James S. Williams, 1995 .

Effect of the density of collision cascades on implantation damage in GaN

S. Kucheyev, C. Jagadish, Gang Li, 2001 .

Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon

C. Jagadish, S. Charnvanichborikarn, J. Wong-Leung, 2011 .

Electrically active subthreshold damage in Si ion implanted with Si, Ge, and Sn

C. Jagadish, P. Kringho, James S. Williams, 1994 .

Generation rate of point defects in silicon irradiated by MeV ions

C. Jagadish, B. Svensson, James Williams, 1993 .

Deep level transient spectroscopy study of defects in megaelectronvolt germanium ion implanted silicon

C. Jagadish, B. Svensson, N. Hauser, 1992 .

Surface morphological structures in ultra-high-dose self-implanted silicon

J. McCallum, Xianfang Zhu, James S. Williams, 1998 .

Microstructure of ultra high dose self implanted silicon

J. McCallum, Xiaohua Zhu, D. Llewellyn, 1997 .

OXIDATION OF SILICON BY LOW ENERGY OXYGEN IONS

K. Short, B. Svensson, M. Petravić, 1997 .

Mechanical deformation of InP and GaAs by spherical indentation

M. Swain, J. Wong-Leung, P. Munroe, 2001 .

Ion implantation into GaN

Stephen J. Pearton, Sergei O. Kucheyev, S. Pearton, 2001 .

Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

D. Macdonald, A. Cuevas, M. Conway, 2003 .

Contact-induced defect propagation in ZnO

S. Kucheyev, C. Jagadish, M. Swain, 2002 .

Mechanical deformation of single-crystal ZnO

S. Kucheyev, C. Jagadish, M. Swain, 2002 .

Indentation-induced damage in GaN epilayers

S. Kucheyev, M. Swain, J. Wong-Leung, 2002 .

Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon

M. Swain, J. Wong-Leung, P. Munroe, 2000 .

Formation of metal hydrides by mechanical alloying

James Williams, Ying Chen, James S. Williams, 1995 .

Controlled formation of metastable germanium polymorphs

Malcolm Guthrie, Guoyin Shen, Brad D. Malone, 2014 .

The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN

S. Kucheyev, C. Jagadish, Gang Li, 2001 .

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

I. Umezu, S. Charnvanichborikarn, M. Aziz, 2013 .

The influence of capping layers on pore formation in Ge during ion implantation

James Williams, H. Alkhaldi, T. Tran, 2016 .

Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys

J. L. Hansen, H. Alkhaldi, M. Ridgway, 2016 .

Nanoindentation-induced phase transformation in relaxed and unrelaxed ion-implanted amorphous germanium

P. Munroe, James Williams, J. Bradby, 2009 .

Photocarrier lifetime and transport in silicon supersaturated with sulfur

S. Charnvanichborikarn, M. Aziz, D. Recht, 2012 .

Carbothermic reduction of llmenite (FeTiO3) and rutile (TiO2)

N. Welham, James Williams, James S. Williams, 1999 .

High pressure crystalline phase formation during nanoindentation: Amorphous versus crystalline silicon

James Williams, J. Bradby, S. Ruffell, 2006 .

Thermal Stability of Ion-implanted Hydrogen in ZnO

S. Pearton, K. Ip, D. Norton, 2002 .

Extended milling of graphite and activated carbon

Nicholas J. Welham, N. Welham, James Williams, 1998 .

Medium-range order in amorphous silicon investigated by constrained structural relaxation of two-body and four-body electron diffraction data

M. Treacy, D. Cockayne, James Williams, 2012 .

Influence of milling temperature and atmosphere on the synthesis of iron nitrides by ball milling

James Williams, Ying Chen, T. Halstead, 1996 .

Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens

S. Charnvanichborikarn, M. Aziz, D. Recht, 2011 .

Damage to epitaxial GaN layers by silicon implantation

S. Pearton, H. Tan, J. Zou, 1996 .

Nature of planar defects in ion-implanted GaN

S. Kucheyev, C. Jagadish, Gang Li, 2003 .

High-dose ion implantation into GaN

S. Kucheyev, C. Jagadish, Gang Li, 2001 .

Ion-beam-induced dissociation and bubble formation in GaN

S. Kucheyev, C. Jagadish, Gang Li, 2000 .

Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardment

S. Kucheyev, C. Jagadish, Gang Li, 2000 .

Ion-beam-induced porosity of GaN

S. Kucheyev, C. Jagadish, Gang Li, 2000 .

Strong surface disorder and loss of N produced by ion bombardment of GaN

S. Pearton, S. Kucheyev, C. Jagadish, 2000 .

Surface Disordering and Nitrogen Loss in GaN under Ion Bombardment

S. Pearton, S. Kucheyev, H. Tan, 2000 .

Annealing of ion implanted gallium nitride

J. Zolper, S. Pearton, H. Tan, 1998 .

Electrical and structural analysis of high-dose Si implantation in GaN

R. F. Karlicek, J. Zolper, S. Pearton, 1997 .

High dose Si- and Mg-implantation in GaN: Electrical and structural analysis

J. Zolper, M. Crawford, R. Stall, 1997 .

Role of electronic processes in epitaxial recrystallization of amorphous semiconductors

R. Elliman, James Williams, James S. Williams, 1983 .

Ion-beam-produced structural defects in ZnO

S. Kucheyev, C. Jagadish, A. Hamza, 2003 .

Large-quantity production of high-yield boron nitride nanotubes

Ying Chen, M. Conway, Y. Chen, 2002 .

A solid-state process for formation of boron nitride nanotubes

John D. Fitz Gerald, J. Gerald, Ying Chen, 1999 .

Synthesis of boron nitride nanotubes at low temperatures using reactive ball milling

J. Gerald, James Williams, Ying Chen, 1999 .

Nanoindentation of ion-implanted crystalline germanium

M. Swain, P. Munroe, J. Bradby, 2009 .

Ultrafast Laser Induced Confined Microexplosion: A New Route to Form Super-Dense Material Phases

A. Rode, E. Gamaly, B. Haberl, 2014 .

Dependence of short and intermediate-range order on preparation in experimental and modeled pure a-Si

K. Nordlund, T. Petersen, F. Djurabekova, 2016 .

Quantitative electromechanical characterization of materials using conductive ceramic tips

R. Major, J. Bradby, O. Warren, 2014 .

Use of MeV O+ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors

P. Wisk, F. Ren, S. Pearton, 1992 .

Chemical origin of the yellow luminescence in GaN

Chennupati Jagadish, Sergei O. Kucheyev, Milos Toth, 2002 .

Effect of irradiation temperature and ion flux on electrical isolation of GaN

S. Kucheyev, C. Jagadish, Gang Li, 2002 .

A comparative study of deep levels created by low dose implantation of hydrogen, oxygen and silicon into MOCVD grown n-GaAs

H. Tan, C. Jagadish, James Williams, 1995 .

Characterization of deep levels and carrier compensation created by proton irradiation in undoped GaAs

Chennupati Jagadish, Hark Hoe Tan, H. Tan, 1995 .

Experimental evidence for semiconducting behavior of Si-XII

A. Knights, J. Bradby, S. Ruffell, 2011 .

Annealing of nanoindentation-induced high pressure crystalline phases created in crystalline and amorphous silicon

S. Koenig, James Williams, B. Haberl, 2009 .

Patterning of silicon by indentation and chemical etching

James Williams, J. Bradby, R. Rao, 2007 .

Annealing kinetics of nanoindentation-induced polycrystalline high pressure phases in crystalline silicon

J. Bradby, S. Ruffell, James S. Williams, 2007 .

Phase Transformation Dependence on Initial Plastic Deformation Mode in Si via Nanoindentation

S. Wong, James Williams, B. Haberl, 2017 .

The influence of hold time on the onset of plastic deformation in silicon

S. Wong, James Williams, B. Haberl, 2015 .

Phase transformation as the single-mode mechanical deformation of silicon

S. Wong, James Williams, B. Haberl, 2015 .

Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation

James Williams, B. Haberl, J. Bradby, 2015 .

Thermal evolution of the metastable r8 and bc8 polymorphs of silicon

Malcolm Guthrie, Guoyin Shen, Bianca Haberl, 2015 .

Nanoindentation of Silicon and Germanium

B. Haberl, J. Bradby, M. Kiran, 2015 .

Impurity-free seeded crystallization of amorphous silicon by nanoindentation

A. Knights, James Williams, J. Bradby, 2011 .

Room temperature writing of electrically conductive and insulating zones in silicon by nanoindentation

James Williams, J. Bradby, S. Ruffell, 2011 .

Mechanical deformation in silicon by micro-indentation

M. Swain, J. Wong-Leung, P. Munroe, 2001 .

Preferential amorphization and defect annihilation at nanocavities in silicon during ion irradiation

H. Bernas, James Williams, Xiaohua Zhu, 2000 .

Shrinkage mechanism of nanocavities in amorphous Si under ion irradiation: An in situ study

H. Bernas, James Williams, M. Ridgway, 2003 .

Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation

B. Johnson, J. McCallum, B. Haberl, 2011 .

Phase transformations induced by spherical indentation in ion-implanted amorphous silicon

P. Munroe, James Williams, B. Haberl, 2006 .

Mechanical Property Characterisation of Crystalline, Ion Implantation Amorphised and Annealed Relaxed Silicon with Spherical Indenters

M. Swain, James Williams, J. Field, 1993 .

Ion implantation and annealing studies in III-V nitrides

J. Zolper, S. Pearton, H. Tan, 1996 .

Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing

J. Abelson, Tian T Li, I. McKerracher, 2011 .

Structural characterization of pressure-induced amorphous silicon

P. Munroe, James Williams, B. Haberl, 2009 .

Increased dissolution of ilmenite induced by high-energy ball milling

Ying Chen, S. Campbell, G. Wang, 1999 .

High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering

Chennupati Jagadish, Hark Hoe Tan, Tadeusz Suski, 2000 .

Effect of ion species on the accumulation of ion-beam damage in GaN

Chennupati Jagadish, Jin Zou, Sergei O. Kucheyev, 2001 .

Ion-Beam-Induced Amorphization and Epitaxial Crystallization of Silicon

H. Bernas, James Williams, G. Azevedo, 2009 .

In Situ Measurements of the Channeling Dependence of Ion-beam-induced Recrystallization in Silicon

I. M. Young, A. Kinomura, M. Conway, 2002 .

Ion beam induced epitaxy experiments in silicon under channeling and random alignments

I. M. Young, M. Conway, James S. Williams, 2000 .

Dynamic annealing in III-nitrides under ion bombardment

S. Kucheyev, C. Jagadish, J. Zou, 2004 .

Activation energies for light ions in ion beam induced epitaxial crystallization

A. Chayahara, Y. Horino, A. Kinomura, 1999 .

The Kinetics and Microstructure of Ion Beam Induced Crystallisation of Silicon

T. Seidel, W. Brown, R. Elliman, 1985 .

Electronic effects in ion-stimulated desorption of positive halogen ions from semiconductor surfaces

James Williams, M. Petravić, James S. Williams, 1995 .

Effect of boron on interstitial-related luminescence centers in silicon

C. Jagadish, B. Johnson, J. McCallum, 2010 .

Large energy shifts in GaAs‐AlGaAs quantum wells by proton irradiation‐induced intermixing

Chennupati Jagadish, Hark Hoe Tan, M. Gal, 1996 .

Ion damage buildup and amorphization processes in GaAs–AlxGa1−xAs multilayers

H. Tan, C. Jagadish, J. Zou, 1996 .

Damage accumulation and amorphization in GaAs-AlGaAs structures

C. A. Larsen, C. Jagadish, Gang Li, 1993 .

Ion damage buildup and amorphization processes in AlxGa1−xAs

H. Tan, C. Jagadish, J. Zou, 1995 .

Proximity gettering of Au to ion beam induced defects in silicon

J. Poate, D. Eaglesham, D. Jacobson, 1995 .

Implant isolation of ZnO

S. Kucheyev, C. Jagadish, S. Sasa, 2003 .

Electrical isolation of ZnO by ion bombardment

S. Kucheyev, C. Jagadish, S. Sasa, 2002 .

Implant isolation of ZnO epitaxial layers

S. Kucheyev, C. Jagadish, S. Sasa, 2002 .

Formation and growth of nanoindentation-induced high pressure phases in crystalline and amorphous silicon

P. Munroe, James Williams, J. Bradby, 2007 .

Identification of nanoindentation-induced phase changes in silicon by in situ electrical characterization

J. Bradby, S. Ruffell, N. Fujisawa, 2007 .

Ion-beam-produced damage and its stability in AlN films

M. O. Manasreh, I. Ferguson, S. Kucheyev, 2002 .

Electron stimulated desorption of positive and negative ions from surfaces

James Williams, M. Petravić, W. Wong, 1993 .

Ion-induced noncollisional ejection of positive secondary ions

James Williams, M. Petravić, James S. Williams, 1991 .

Towards a direct band gap group IV Ge-based material

J. Mathews, T. Tran, James S. Williams, 2019, Materials Science in Semiconductor Processing.

Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting

I. Umezu, S. Charnvanichborikarn, B. Bob, 2010 .

Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films

J. Warrender, P. Chow, Wenjie Yang, 2018 .

Cathodoluminescence depth profiling of ion-implanted GaN

S. Kucheyev, C. Jagadish, M. Toth, 2001 .

Critical temperature and ion flux dependence of amorphization in GaAs

R. Brown, James S. Williams, 1997 .

ICP Dry Etching of ZnO and Effects of Hydrogen

F. Ren, S. Pearton, K. Ip, 2003 .

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Michael J. Aziz, David Pastor, Austin J. Akey, 2016 .

Characterization of Structural Changes and Defects in Ion Bombarded GaAs

R. Elliman, G. Olson, E. Nygren, 1986 .

Temperature dependent deformation mechanisms in pure amorphous silicon

James Williams, B. Haberl, J. Bradby, 2014 .

Phase transformations induced in relaxed amorphous silicon by indentation at room temperature

M. Swain, P. Munroe, James Williams, 2004 .

In-situ electrical probing of zones of nanoindentation-induced phases of silicon

R. Major, J. Bradby, O. Warren, 2008 .

New insight into pressure-induced phase transitions of amorphous silicon: the role of impurities

James Williams, M. Guthrie, B. Haberl, 2013 .

Understanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions

James Williams, B. Haberl, J. Bradby, 2009 .

Nanoindentation-induced deformation of Ge

M. Swain, J. Wong-Leung, P. Munroe, 2002 .

The Nucleation and Growth of Carbon Nanotubes in a Mechano-Thermal Process

J. Gerald, James Williams, Ying Chen, 2004 .

In situ electrical characterization of phase transformations in Si during indentation

Michael V. Swain, Jodie Bradby, M. Swain, 2003 .

Nanoindentation of epitaxial GaN films

S. Kucheyev, C. Jagadish, M. Swain, 2000 .

Ball milling induced low-temperature carbothermic reduction of ilmenite

James Williams, Ying Chen, T. Hwang, 1996 .

Lattice damage produced in GaN by swift heavy ions

Chennupati Jagadish, Jin Zou, Sergei O. Kucheyev, 2004 .

High-energy ion implantation for electrical isolation of microelectronic devices

R. Elliman, M. Ridgway, S. Ellingboe, 1994 .

Cold nanoindentation of germanium

James Williams, J. Bradby, L. Huston, 2017 .

The effect of crystal orientation on thermal shock-induced fracture and properties of ion implanted sapphire

D. Jamieson, V. Gurarie, M. Conway, 2002 .

Ion beam modification of thermal stress resistance of MgO single crystals with different crystallographic faces

James Williams, V. Gurarie, M. Conway, 2001 .

THERMAL STRESS RESISTANCE OF ION IMPLANTED SAPPHIRE CRYSTALS

D. Jamieson, V. Gurarie, R. Szymanski, 1999 .

Formation of gallium nitride by a novel hot mechanical alloying process

A. Całka, James Williams, P. Millet, 1993 .

Temperature dependent segregation of metals at Si–SiO2 interfaces during oxygen ion bombardment

K. Short, A. White, James S. Williams, 1997 .

Radiation-Induced Segregation of Metals At Moving SiO 2 -Amorphous Si Interfaces

K. Short, M. Conway, M. Petravić, 1996 .

Effects of excitation density on cathodoluminescence from GaN

Chennupati Jagadish, Sergei O. Kucheyev, Milos Toth, 2001 .

Phase transitions and epitaxial Ni3Si formation on Ni(100) after high dose silicon ion implantation

James Williams, Z. Rao, D. Sood, 1993 .

Nitriding reactions of TiAl system induced by ball milling in ammonia gas

B. Ninham, A. Całka, James Williams, 1994 .

Structural disorder in ion-implanted AlxGa1−xN

M. O. Manasreh, I. Ferguson, S. Kucheyev, 2002 .

Nickel silicide formation in silicon implanted nickel

G. Collins, James Williams, Z. Rao, 1995 .

Phase transformation pathways in amorphous germanium under indentation pressure

P. Munroe, James Williams, B. Haberl, 2014 .

Ion beam synthesis and photoluminescence study of supersaturated fully-relaxed Ge-Sn alloys

J. Warrender, J. Mathews, L. Smillie, 2020 .

Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

J. Wong-Leung, D. Pastor, M. Aziz, 2016 .

Effect of hydrogen on nanoindentation-induced phase transformations in amorphous silicon

James Williams, J. Bradby, S. Ruffell, 2009 .

Effect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous silicon

James Williams, B. Haberl, J. Bradby, 2009 .

Strength of porous α-SiO2 in a shock loaded environment: Calibration via Richtmyer–Meshkov instability and validation via Mach lens

M. Hudspeth, James Williams, S. Root, 2020 .

X-ray spectrometry investigation of electrical isolation in GaN

S. Kucheyev, C. Jagadish, Gang Li, 2002 .

Imaging charge trap distributions in GaN using environmental scanning electron microscopy

S. Kucheyev, C. Jagadish, Gang Li, 2000 .

GETTERING OF NICKEL TO CAVITIES IN SILICON INTRODUCED BY HYDROGEN IMPLANTATION

J. Wong-Leung, B. Mohadjeri, James S. Williams, 1995 .

Ion damage and annealing of epitaxial gallium nitride and comparison with GaAs/AlGaAs materials

S. Pearton, H. Tan, C. Yuan, 1995 .

Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures

S. Kucheyev, C. Jagadish, Gang Li, 2001 .

Mechanical Properties of As-Grown and Ion-Beam-Modified GaN Films

S. Kucheyev, C. Jagadish, M. Swain, 2000 .

MeV implantation into semiconductors

C. Jagadish, R. Elliman, B. Svensson, 1993 .

Phase transformations and compound formation during ion irradiation of materials

Z. Rao, M. Petravić, R. Goldberg, 1994 .