Hye-Jin Kim

A 0.1-$\mu{\hbox {m}}$ 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Byung-Gil Choi, Hongsik Jeong, Chang-Soo Lee, 2007, IEEE Journal of Solid-State Circuits.

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Byung-Gil Choi, Hye-Jin Kim, Chang-Soo Lee, 2008, IEEE Journal of Solid-State Circuits.

Scalable Two Transistor Memory (STTM) for mobile embedded applications with 80nm technology

Byung-Gil Choi, Woo Yeong Cho, Beak-Hyung Cho, 2004 .