Gennady I. Zebrev

发表

Design of 65 nm CMOS SRAM for space applications: A comparative study

Andrey A. Antonov, Anna B. Boruzdina, Maxim S. Gorbunov, 2014, 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

Compact physical modeling of fully depleted SOI MOSFET

Gennady I. Zebrev, M. S. Gorbunov, 2006, International Conference on Micro- and Nano-Electronics.

Radiation-hardening-by-design with circuit-level modeling of total ionizing dose effects in modern CMOS technologies

Gennady I. Zebrev, M. S. Gorbunov, P. N. Osipenko, 2009, International Conference on Micro- and Nano-Electronics.

Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

Gennady I. Zebrev, M. S. Gorbunov, V. S. Pershenkov, 2008, International Conference on Micro- and Nano-Electronics.

Multiple Cell Event Partitioning for Simulation of Soft Error Rates in Space Systems with Embedded Error Correcting Codes

Maxim S. Gorbunov, Gennady I. Zebrev, Artur M. Galimov, 2017, 2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

Compact modeling of radiation-induced drain leakage current

V. V. Orlov, Gennady I. Zebrev, Maxim G. Drosdetsky, 2016, International Conference on Micro- and Nano-Electronics.

Physics-based modeling of TID induced global static leakage in different CMOS circuits

V. V. Orlov, Maxim S. Gorbunov, Gennady I. Zebrev, 2017, Microelectron. Reliab..

Modeling of graphene electronics analog devices

Gennady I. Zebrev, I. A. Danilov, A. A. Tselykovskiy, 2012 .

Analysis of SOI CMOS microprocessor's SEE sensitivity: Correlation of the results obtained by different test methods

Andrey A. Antonov, Vasily S. Anashin, Maxim S. Gorbunov, 2011, 2011 12th European Conference on Radiation and Its Effects on Components and Systems.

Fault-Tolerant SOI Microprocessor for Space Applications

Andrey A. Antonov, Vasily S. Anashin, Alexander I. Chumakov, 2013, IEEE Transactions on Nuclear Science.

Dielectric influence on IV curve of graphene field effect transistor

Gennady I. Zebrev, S A Shostachenko, R V Zakharchenko, 2016, International Conference on Micro- and Nano-Electronics.

Circuit-Level Layout-Aware Modeling of Single-Event Effects in 65-nm CMOS ICs

Anton O. Balbekov, Maxim S. Gorbunov, Gennady I. Zebrev, 2018, IEEE Transactions on Nuclear Science.

A simple calculation method for heavy ion induced soft error rate in space environment

Gennady I. Zebrev, Artur M. Galimov, I. V. Elushov, 2016, International Conference on Micro- and Nano-Electronics.

Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response

V. V. Belyakov, Gennady I. Zebrev, Viktor N. Ulimov, 2002, Microelectron. Reliab..

Radiation-induced mismatch enhancement in 65nm CMOS SRAM for space applications

Andrey A. Antonov, Alexandra I. Shnaider, Maxim S. Gorbunov, 2014, Other Conferences.

Compact Modeling and Simulation of Heavy Ion-Induced Soft Error Rate in Space Environment: Principles and Validation

Gennady I. Zebrev, Artur M. Galimov, 2017, IEEE Transactions on Nuclear Science.

Parasitic bipolar effect in modern SOI CMOS technologies

Gennady I. Zebrev, M. S. Gorbunov, Boris V. Vasilegin, 2008, International Conference on Micro- and Nano-Electronics.

Cross-section Partitioning Technique for Multiple Cell Upsets Rate Simulation in Space Environment

Niisi Ras, M. S. Gorbunov, Gennady I. Zebrev, 2018 .

Total ionizing dose effects modeling in common-gate tri-gate FinFETs using Verilog-A

Maxim S. Gorbunov, Gennady I. Zebrev, 2016, International Conference on Micro- and Nano-Electronics.

Modeling and simulation of dose effects in bipolar analog integrated circuits

Valentin O. Turin, Gennady I. Zebrev, I. A. Danilov, 2014, Other Conferences.

Modeling of single event gate rupture in power MOSFETs under heavy ion irradiation

Gennady I. Zebrev, V. V. Emelyanov, R. G. Useinov, 2014, Other Conferences.

Simulation of bipolar transistors degradation at various dose rates and electrical modes for high dose conditions

Vasily S. Anashin, Gennady I. Zebrev, Rustem G. Useinov, 2013, 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

Methods for the Prediction of Total-Dose Effects on Modern Integrated Semiconductor Devices in Space: A Review

A. V. Sogoyan, Alexander I. Chumakov, P. K. Skorobogatov, 2003 .

Compact Modeling of MOSFET $I$ – $V$ Characteristics and Simulation of Dose-Dependent Drain Currents

Gennady I. Zebrev, Alexander S. Bakerenkov, Vladislav A. Felitsyn, 2017, IEEE Transactions on Nuclear Science.