Bernard Gil

发表

Determination of carrier diffusion length in p- and n-type GaN

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2014, Photonics West - Optoelectronic Materials and Devices.

Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2016, SPIE OPTO.

Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2015, Photonics West - Optoelectronic Materials and Devices.

X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD

Bernard Gil, Olivier Briot, Matthieu Moret, 2015, Photonics West - Optoelectronic Materials and Devices.

Wurtzitic semiconductors heterostructures grown on (hk.ℓ) oriented substrates: the interplay between spontaneous and piezoelectric polarization fields, elastic energy, and the modification of quantum confined Stark effect

Bernard Gil, B. Gil, 2009, OPTO.

High excitation photoluminescence effects as a probing tool for the growth of Cu(In,Ga)Se2

Nicolas Barreau, Bernard Gil, Olivier Briot, 2015, Photonics West - Optoelectronic Materials and Devices.

DUV LEDs based on AlGaN quantum dots

Bernard Gil, Mathieu Leroux, Jean-Yves Duboz, 2021, OPTO.

Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors

Hadis Morkoç, Roberto Cingolani, Bernard Gil, 1999 .

Recent advances in the MOVPE growth of indium nitride

Bernard Gil, Olivier Briot, Matthieu Moret, 2009 .

Oscillator strengths of A, B, and C excitons in ZnO films

Bernard Gil, B. Gil, 2001 .

Optical, structural investigations and band-gap bowing parameter of GaInN alloys

Michael Heuken, Bernard Gil, Olivier Briot, 2009 .

Group III nitride semiconductor compounds : physics and applications

Bernard Gil, B. Gil, 1998 .

Determination of carrier diffusion length in GaN

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2015 .

Polariton lasers based on semiconductor quantum microspheres.

V. V. Nikolaev, Alexey Kavokin, Bernard Gil, 2004 .

Raman Determination of the Phonon Deformation Potentials in α-GaN

F. Demangeot, Bernard Gil, Olivier Briot, 1996 .

Scale Effects on Exciton Localization and Nonradiative Processes in GaN/AlGaN Quantum Wells

Pierre Lefebvre, Nicolas Grandjean, Bernard Gil, 2000 .

Photoreflectance spectroscopy as a powerful tool for the investigation of GaN–AlGaN quantum well structures

Pierre Lefebvre, Nicolas Grandjean, Bernard Gil, 1999 .

Excitons in nitride heterostructures: From zero- to one-dimensional behavior

Alexey Kavokin, Bernard Gil, Benjamin Damilano, 2013 .

Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells

M. Teisseire, Alexey Kavokin, Bernard Gil, 2011 .

Determination of the spin-exchange interaction constant in wurtzite GaN

Shuji Nakamura, Bernard Gil, Javier Campo, 1998 .

Diffusion length of photoexcited carriers in GaN

Ferdinand Scholz, Bernard Gil, Olivier Briot, 1997 .

Recombination dynamics of free and localized excitons in GaN/Ga 0.93 Al 0.07 N quantum wells

Hadis Morkoç, Pierre Lefebvre, Won-Seok Kim, 1998 .

Raman determination of phonon deformation potentials in α-GaN

Bernard Gil, Olivier Briot, François Demangeot, 1996 .

Quantum-confined Stark effect and recombination dynamics of spatially indirect excitons in MBE-grown GaN-AlGaN quantum wells

Pierre Lefebvre, Nicolas Grandjean, Bernard Gil, 1999 .

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

Bernard Gil, Benjamin Damilano, Pierre Valvin, 2015 .

Polariton lasing in a hybrid bulk ZnO microcavity

Sophie Bouchoule, Georg Rossbach, Nicolas Grandjean, 2011 .

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Shuji Nakamura, Hadis Morkoç, Pierre Lefebvre, 1999 .

Strain-Fields Effects and Reversal of the Nature of the Fundamental Valence Band of ZnO Epilayers : Semiconductors

Alain Lusson, Bernard Gil, Vincent Sallet, 2001 .

Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

Pierre Lefebvre, Nicolas Grandjean, Bernard Gil, 1999 .

Extremely sharp dependence of the exciton oscillator strength on quantum-well width in the GaN/AlxGa1-xN system: The polarization field effect

Nicolas Grandjean, Alexey Kavokin, Bernard Gil, 2001 .

Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.

Pierre Lefebvre, Nicolas Grandjean, Bernard Gil, 1998 .

INTERNAL STRUCTURE AND OSCILLATOR STRENGTHS OF EXCITONS IN STRAINED ALPHA -GAN

Bernard Gil, Olivier Briot, B. Gil, 1997 .

Polarization fields in wurtzite strained layers grown on ( hkℓ) planes

Bernard Gil, Olivier Briot, Pierre Bigenwald, 2008 .

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Pierre Lefebvre, Nicolas Grandjean, Bernard Gil, 2001 .