Deborah A. Neumayer

Induced e-beam charge impact on spatial orientation of gate-all-around silicon wires device fabricated on boron nitride substrate

Shimon Levi, Ofer Adan, Alfred Grill, 2015, Advanced Lithography.

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers

David J. Webb, Jean-Pierre Locquet, Chiara Marchiori, 2006 .

Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz

Robert Benjamin Laibowitz, David E. Kotecki, Deborah A. Neumayer, 1998 .

Electron mobility dependence on annealing temperature of W∕HfO2 gate stacks: The role of the interfacial layer

Alessandro Curioni, Wanda Andreoni, Deborah A. Neumayer, 2006 .

Low-Voltage, High-Mobility Pentacene Transistors with Solution-Processed High Dielectric Constant Insulators

Sampath Purushothaman, Robert Benjamin Laibowitz, Deborah A. Neumayer, 1999 .

Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition

Eduard A. Cartier, Deborah A. Neumayer, E. Cartier, 2001 .