Masaki Hirayama

发表

Video reproducing method and system

平山雅樹, Masaki Hirayama, 2003 .

High Performance and Highly Reliable Novel CMOS Devices Using Accumulation Mode Fully Depleted SOI MOSFETs

Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, 2006 .

Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))

Tadahiro Ohmi, Shigetoshi Sugawa, Akinobu Teramoto, 2005 .

Design of Radial Line Slot Antennas at 8.3 GHz for Large Area Uniform Plasma Generation

Tadahiro Ohmi, Makoto Ando, Naohisa Goto, 1999 .

High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma

Yukio Hayakawa, Tadahiro Ohmi, Shigetoshi Sugawa, 2003 .

High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment

Tadahiro Ohmi, Shigetoshi Sugawa, Takeyoshi Kato, 2004 .

A Technology for Reducing Flicker Noise for ULSI Applications

Tadahiro Ohmi, Shigetoshi Sugawa, Akinobu Teramoto, 2003 .

Microcrystalline/Amorphous Thin Si Films Deposition by a Newly Developed Dual Injection System Employing Hydrogen Plasma and Silicon Radicals at Low Temperature (300 °C) Chemical Vapor Deposition Process

Tadahiro Ohmi, Masaki Hirayama, Herzl Aharoni, 2007 .

New era of silicon technologies due to radical reaction based semiconductor manufacturing

Tadahiro Ohmi, Akinobu Teramoto, Masaki Hirayama, 2006 .

High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs

Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, 2007 .

MFIS-structure Memory Device with High Quality Ferroelectric Sr2(Ta1-x Nbx)2O7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition

Tadahiro Ohmi, Shigetoshi Sugawa, Tetsuya Goto, 2004 .

Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices

Tadahiro Ohmi, Shigetoshi Sugawa, Akinobu Teramoto, 2006 .