T. Shimizu

Extendibility of Ta2O5 Metal-Insulator-Metal Capacitor Using Ru Electrode

Y. Okuno, J. Shibata, Kazuhiko Yamamoto, 2000 .

The growth properties of SiGe films on Si(100) using Si2H6 gas and Ge solid source molecular beam epitaxy

M. Ishida, Tetsuro Nakamura, H. Wado, 1995 .

Selective epitaxial growth of Ge and SiGe using Si2H6 gas and Ge solid source molecular beam epitaxy

Makoto Ishida, Hiroyuki Wado, Tadami Shimizu, 1995 .

Epitaxial growth of γ ‐ Al2O3 layers on Si(111) using Al solid source and N2O gas molecular beam epitaxy

M. Ishida, H. Wado, T. Shimizu, 1995 .