N. Shimizu

Aluminum Nitride Epitaxially Grown on Silicon: Orientation Relationships

K. Tsubouchi, N. Mikoshiba, M. Morita, 1981 .

Mesh pattern of Ge islands grown using solid phase epitaxy

H. Hibino, Y. Shinoda, N. Shimizu, 1993 .

Surface structural changes during the initial growth of Ge on Si(111)7 × 7

Yoshihiro Kobayashi, K. Sugii, H. Hibino, 1992 .

Periodic Arrangement of GE Islands on SI(111)

T. Ogino, H. Hibino, Y. Shinoda, 1993 .

Interface structure of Ge/Si(111) during solid-phase epitaxy studied by medium-energy ion scattering

T. Ogino, T. Nishioka, Y. Shinoda, 1995 .

Pb preadsorption facilitates island formation during Ge growth on Si(111)

T. Ogino, H. Hibino, T. Nishioka, 1994 .