S. Bruyère

发表

On the role of holes in oxide breakdown mechanism in inverted nMOSFETs

Thomas Skotnicki, G. Pananakakis, Vincent Huard, 2003, Microelectron. Reliab..

Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides

G. Ribes, M. Denais, Vincent Huard, 2005, Microelectron. Reliab..

Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride

Gérard Ghibaudo, S. Bruyère, G. Beylier, 2007, Microelectron. Reliab..

Gate oxide Reliability assessment optimization

G. Pananakakis, Gérard Ghibaudo, Frederic Monsieur, 2002, Microelectron. Reliab..

Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement

David Roy, Frederic Monsieur, E. Vincent, 2002, Microelectron. Reliab..

Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions

G. Pananakakis, David Roy, Gérard Ghibaudo, 2001, Microelectron. Reliab..

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown

G. Ribes, M. Denais, Gérard Ghibaudo, 2005, Microelectron. Reliab..

Impact of silicon nitride CESL on NLDEMOS transistor reliability

Gérard Ghibaudo, S. Bruyère, G. Beylier, 2008, Microelectron. Reliab..

Failures in ultrathin oxides: Stored energy or carrier energy driven?

David Roy, Gérard Ghibaudo, Frederic Monsieur, 2001, Microelectron. Reliab..

New insights into the change of voltage acceleration and temperature activation of oxide breakdown

G. Ribes, Vincent Huard, David Roy, 2003, Microelectron. Reliab..

Body effect induced wear-out acceleration in ultra-thin oxides

David Roy, Gérard Ghibaudo, E. Vincent, 2001, Microelectron. Reliab..

Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxides

Gerard Ghibaudo, David Roy, Emmanuel Vincent, 1999 .