J. Fernández

发表

Simulation of the Raman spectra of CO₂: bridging the gap between algebraic models and experimental spectra.

F. Pérez-Bernal, M. Carvajal, R. Lemus, 2014, The Journal of chemical physics.

A study of the Raman spectrum of CO2 using an algebraic approach

F. Pérez-Bernal, M. Carvajal, R. Lemus, 2012 .

Nonequilibrium processes in supersonic jets of N2, H2, and N2 + H2 mixtures: (I) Zone of silence.

J. M. Fernández, G. Tejeda, S. Montero, 2009, The journal of physical chemistry. A.

LABORATORY STUDY OF RATE COEFFICIENTS FOR H2O:He INELASTIC COLLISIONS BETWEEN 20 AND 120 K

Marta I. Hernández, E. Carmona-Novillo, G. Tejeda, 2014, The Astrophysical Journal Supplement Series.

The onset of molecular condensation: hydrogen.

G. Tejeda, S. Montero, J. Fernández, 2010, Physical chemistry chemical physics : PCCP.

Photosensitisation of red blood cell haemolysis by photodynamic agents

L. Grossweiner, M. Bilgin, L. I. Grossweiner, 1998, Lasers in Medical Science.

Reflectance anisotropy from non-III-V systems: Si and SiGe growth on (001) Si and adsorbate-induced reconstruction of Cu(110)

K. J. Kitching, B. Joyce, J. M. Fernández, 1995 .

Inelastic collisions in molecular oxygen at low temperature (4 ≤ T ≤ 34 K). Close-coupling calculations versus experiment.

M. I. Hernández, G. Tejeda, S. Montero, 2011, The Journal of chemical physics.

Low-temperature inelastic collisions between hydrogen molecules and helium atoms.

F. Thibault, G. Tejeda, S. Montero, 2008, The Journal of chemical physics.

Self-limiting segregation and incorporation during boron doping of Si and SiGe

B. Joyce, I. Berbezier, B. Gallas, 1999 .

Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: hydrogen coverage and interfacial abruptness

B. Joyce, M. Xie, L. Hart, 1996 .

Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy

B. Joyce, M. Xie, A. Matsumura, 1996 .

Structural and magnetic properties of R/sub 2/Fe/sub 14/BH/sub x/

C. Rillo, D. Fruchart, J. Puértolas, 1988 .

Raman spectroscopy of small para-H2 clusters formed in cryogenic free jets.

J. M. Fernández, J. Toennies, D. Blume, 2004, Physical review letters.

Si:SiGe quantum wells grown on (118) substrates: Surface morphology and transport properties

T. Thornton, K. Fobelets, S. Kaya, 1997 .

Rotranslational state-to-state rates and spectral representation of inelastic collisions in low-temperature molecular hydrogen.

F. Thibault, J. M. Fernández, G. Tejeda, 2006, The Journal of chemical physics.

Variable-range hopping transport in modulation-doped n-channel Si/Si1-xGex quantum well structures

T. Thornton, J. Harris, N. Woods, 1999 .

In-situ monitoring of Si and SiGe growth on Si(001) surfaces during gas-source molecular beam epitaxy using reflectance anisotropy

B. A. Joyce, Martyn E. Pemble, B. Joyce, 1996 .

Analysis of quantum lifetime behaviour in modulation-doped n-channel structures

T. Thornton, J. Harris, N. Woods, 1998 .

Surface segregation during molecular beam epitaxy : the site-blocking effects of surfactant atoms

B. Joyce, M. Xie, A. K. Lees, 1996 .

Arsenic surface segregation and incorporation in Si and Si1 − xGex during gas source molecular beam epitaxy

B. Joyce, M. Xie, A. K. Lees, 1997 .

Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy

B. Joyce, G. Parry, N. Anwar, 1995 .

Si/SiGe quantum wells grown on vicinal Si(001) substrates: Morphology, dislocation dynamics, and transport properties

T. Thornton, S. Kaya, J. M. Fernández, 1998 .

Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy

T. Thornton, B. Joyce, J. Zhang, 1995 .

Characterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy

T. Thornton, B. Joyce, J. M. Fernández, 1995 .

Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy

B. Joyce, J. M. Fernández, J. Zhang, 1995 .

New insights on SiGe growth instabilities

B. Joyce, I. Berbezier, J. Derrien, 1998 .

Growth dynamics studied by RHEED during Si Ge epitaxy from gaseous hydrides

B. Joyce, M. Xie, S. Mokler, 1994 .

Magnetotransport of two-dimensional electron gas in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy

T. Thornton, B. Joyce, A. Matsumura, 1996 .

Reflection high-energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy

B. Joyce, J. Zhang, M. Xie, 1994 .

Strain relaxation of compositionally graded InxGa1-xAs buffer layers for modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures

Jianhui Chen, K. Kavanagh, J. M. Fernández, 1992 .

Lattice tilt and dislocations in compositionally step‐graded buffer layers for mismatched InGaAs/GaAs heterointerfaces

Harry H. Wieder, Jianhui Chen, K. Kavanagh, 1992 .

Arsenic doping kinetics in silicon during gas source molecular beam epitaxy

B. Joyce, M. Xie, A. K. Lees, 1998 .

Gas-source molecular beam epitaxy of SiGe virtual substrates : I. Growth kinetics and doping

J. Hartmann, J. Harris, B. Gallas, 2000 .

Raman and infrared spectra of the ν1 band of oxirane

W. J. Lafferty, J. Flaud, F. Kwabia Tchana, 2013 .

Quantum interference in the n-channel of a Si:SiGe quantum well

T. Thornton, A. Matsumura, R. Prasad, 1995 .

Experiments on small (H2)N clusters

G. Tejeda, S. Montero, J. Fernández, 2009 .

Experimental heat-bath cooling of spins

G. Brassard, T. Mor, J. A. Jones, 2005, 1404.6885.

A pr 2 01 4 Experimental Heat-Bath Cooling of Spins

G. Brassard, T. Mor, J. A. Jones, 2019 .

Composition dependent transport properties of strain relaxed InxGa1−xAs(x<0.45) epilayers

Jianhui Chen, J. M. Fernández, H. Wieder, 1992 .

Transport parameters in pseudomorphic and strain-relaxed InGaAs heterojunctions grown by MBE on misoriented (100) GaAs substrates

Jianhui Chen, H. Wieder, J. Fernández, 1993 .

Anisotropic Electron Mobility of Two-Dimensional-Electron-Gas in Modulation Doped In x .Ga 1−y As/In y Al 1−y As Heterostructures

Jianhui Chen, H. Wieder, J. Fernández, 1992 .

Epitaxial growth mode and silicon/silicon-germanium heterointerfaces

B. Joyce, J. Zhang, L. Hart, 1996 .

Investigations of electron-beam and optical induced damage in high mobility SiGe heterostructures

A. Broers, M. Pepper, B. Joyce, 1997 .

Electron distribution in pseudomorphic Al0.30Ga0.70As/ In0.15Ga0.85As/GaAs δ‐doped heterostructures

L. J. Sham, J. M. Fernández, M. Lazzouni, 1993 .

15 6 v 1 1 6 N ov 2 00 5 Experimental Heat-Bath Cooling of Spins

G. Brassard, T. Mor, L. Xiao, 2008 .

SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation

J. Harris, A. Evans, J. Humphrey, 1999 .