Govindo J. Syaranamual

Atmospheric corrosion resistance of electroplated Ni/Ni-P/Au electronic contacts

Zhong Chen, Vinod K. Murugan, Zhigang Jia, 2016, Microelectron. Reliab..

Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation

Govindo J. Syaranamual, Chee Lip Gan, Riko I. Made, 2016, Microelectron. Reliab..

Characterisation of defects generated during constant current InGaN-on-silicon LED operation

Yu Gao, Govindo J. Syaranamual, Chee Lip Gan, 2017, Microelectron. Reliab..

Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation

Govindo J. Syaranamual, Chee Lip Gan, Riko I. Made, 2017, Microelectron. Reliab..

Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing

Govindo J. Syaranamual, Chee Lip Gan, Carl V. Thompson, 2015, 2015 IEEE International Reliability Physics Symposium.