L. Allard

发表

Two‐dimensional time‐resolved imaging with 100‐ps resolution using a resistive anode photomultiplier tube

Jeff F. Young, S. Charbonneau, L. B. Allard, 1992 .

Optical properties of porous silicon

D. J. Lockwood, J. McCaffrey, S. Charbonneau, 1992 .

Fabrication of nanostructures in strained InGaAs/GaAs quantum wells by focused-ion-beam implantation

M. Buchanan, G. C. Aers, S. Charbonneau, 1992 .

Raman Spectroscopy and Optical Properties of Porous Silicon

D. J. Lockwood, S. Charbonneau, D. Houghton, 1993 .

Pixelless infrared imaging utilizing a p-type quantum well infrared photodetector integrated with a light emitting diode

M. Buchanan, Z. R. Wasilewski, L. B. Allard, 1997 .

Si ion implantation‐induced damage in fused silica probed by variable‐energy positrons

A. Knights, J. Albert, J. Brebner, 1996 .

Compositional disordering of strained InGaAs/GaAs quantum wells by Au implantation: Channeling effects

I. V. Mitchell, Robin L. Williams, M. Buchanan, 1991 .

Threshold dose for ion-induced intermixing in InGaAs/GaAs quantum wells

I. V. Mitchell, M. Buchanan, P. Poole, 1994 .

Pixelless infrared imaging device

M. Buchanan, Z. R. Wasilewski, L. B. Allard, 1997 .

Ion implantation‐induced strong photosensitivity in high‐purity fused silica: Correlation of index changes with VUV color centers

J. Albert, J. Brebner, M. Verhaegen, 1996 .

Focused‐ion‐beam damage‐etch patterning for isolation of quantum structures in AlGaAs/GaAs

S. Charbonneau, I. Templeton, M. Fallahi, 1993 .

Photoinduced optical absorption and 400-nm luminescence in low-germanium-content optical f iber preforms irradiated with ArF and KrF excimer-laser light.

L. B. Allard, J. Albert, G. Atkins, 1997, Optics letters.