Al F. Tasch

发表

Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon

Changhae Park, Kevin M. Klein, Al F. Tasch, 1990 .

Low-energy model for ion implantation of arsenic and boron into (100) single-crystal silicon

Geng Wang, Al F. Tasch, B. Obradovic, 1997, Advanced Lithography.

Manufacturing sensitivity analysis of a 0.18-micron NMOSFET

Al F. Tasch, Darryl Angelo, S. A. Hareland, 1996, Advanced Lithography.

A Computationally Efficient Simulator for Three-Dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures

Geng Wang, Al F. Tasch, Di Li, 2001 .

Modeling of manufacturing sensitivity and of statistically based process control requirements for a 0.18 μm NMOS device

Al F. Tasch, Shamsul A. Khan, Peter Zeitzoff, 1998 .

Improved analytic models and efficient parameter extraction for computationally efficient 1D and 2D ion implantation modeling

Al F. Tasch, Yidong Chen, G. Balamurugan, 1998, Advanced Lithography.

Design of 0.18-micron NMOSFETs for low-power applications

Al F. Tasch, S. A. Hareland, Shamsul A. Khan, 1997, Advanced Lithography.

Computationally efficient ion implantation damage model: modified Kinchin-Pease model

Al F. Tasch, S. J. Morris, S. Tian, 1997, Advanced Lithography.

Experimental verification of a new physically based low-energy (<5 keV) ion implant model

Geng Wang, Al F. Tasch, B. Obradovic, 1998, Advanced Lithography.