M. Kerber

Reliability aspects of Hf-based capacitors: Breakdown and trapping effects

Rainer Duschl, M. Kerber, A. Avellan, 2007, Microelectron. Reliab..

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides

A. Kerber, M. Kerber, T. Pompl, 2006, Microelectron. Reliab..

The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices

M. Kerber, T. Pompl, G. Innertsberger, 2001, Microelectron. Reliab..

Reliability screening of high-k dielectrics based on voltage ramp stress

Anabela Veloso, Guido Groeseneken, Luigi Pantisano, 2007, Microelectron. Reliab..

Soft breakdown and hard breakdown in ultra-thin oxides

M. Kerber, C. Engel, H. Wurzer, 2001, Microelectron. Reliab..