Rongming Chu

发表

Gate-recessed GaN high electron mobility transistors with scaled gate length

Rongming Chu, 2008 .

Characteristics of P-channel GaN MOSFET up to 300 °C

Rongming Chu, Sang-Woo Han, Jianan Song, 2019, 2019 Device Research Conference (DRC).

Recent advances in GaN power electronics

Brian Hughes, Rongming Chu, Karim Boutros, 2013, Proceedings of the IEEE 2013 Custom Integrated Circuits Conference.

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Evaluation of an Automated Modeling Tool Applied to New 600 V, 2 A Vertical GaN Transistors

Dushan Boroyevich, Rolando Burgos, Rongming Chu, 2019, 2019 IEEE Applied Power Electronics Conference and Exposition (APEC).

Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT

Xu Chen, S. Kim, M. Chen, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

An Experimental Demonstration of GaN CMOS Technology

Yu Cao, Rongming Chu, Daniel Zehnder, 2016, IEEE Electron Device Letters.

N‐face high electron mobility transistors with a GaN‐spacer

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2007 .

X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE

Christiane Poblenz, James S. Speck, Umesh K. Mishra, 2008 .

Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures

Yugang Zhou, Kei May Lau, Kevin J. Chen, 2003 .

Plasma Treatment for Leakage Reduction in AlGaN/GaN and GaN Schottky Contacts

Rongming Chu, Likun Shen, S. Keller, 2008, IEEE Electron Device Letters.

Modeling and characterization of a 300 V GaN based boost converter with 96% efficiency at 1 MHz

Gregory Reed, Rongming Chu, Raghav Khanna, 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

High performance GaN-on-Si power switch: Role of substrate bias in device characteristics

Rongming Chu, Daniel Zehnder, Brian Hughes, 2011, 69th Device Research Conference.

Normally-off GaN-on-Si multi-chip module boost converter with 96% efficiency and low gate and drain overshoot

Rongming Chu, Raghav Khanna, Marcel Musni, 2014, 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.

MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications

Rongming Chu, S. Denbaars, U. Mishra, 2009, IEEE Electron Device Letters.

Normally-off GaN switching 400V in 1.4ns using an ultra-low resistance and inductance gate drive

Rongming Chu, Marcel Musni, James Lazar, 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

Shuji Nakamura, Umesh K. Mishra, S. P. DenBaars, 2009 .

Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz

Umesh K. Mishra, Rongming Chu, Stacia Keller, 2007 .

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 2008 .

A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs

M. Higashiwaki, Rongming Chu, S. Keller, 2008, 2008 Device Research Conference.

V-Gate GaN HEMTs for X-Band Power Applications

Rongming Chu, Likun Shen, S. Keller, 2008, IEEE Electron Device Letters.

Analyzing losses using junction temperature of 300V 2.4kW 96% efficient, 1MHz GaN synchronous boost converter

Rongming Chu, Marcel Musni, James Lazar, 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

Rongming Chu, S. Keller, Man Hoi Wong, 2008, IEEE Electron Device Letters.

Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200 °C

Rongming Chu, M. Chen, K. Boutros, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

GaN power electronics for automotive application

Rongming Chu, K. Boutros, R. Chu, 2012, 2012 IEEE Energytech.

Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors

En Xia Zhang, Xiao Shen, Christiane Poblenz, 2011 .