Chadwin D. Young

发表

Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs

Nebojsa D. Jankovic, Chadwin D. Young, C. Young, 2016, Microelectron. Reliab..

Introduction to the Special Issue on 2006 International Integrated Reliability Workshop (IIRW)

Yuan Chen, Bill Tonti, Guoqiao Tao, 2007 .

Assessing the reliability and performance impact on the three-dimensional structure of multigate field effect transistor (MugFET)

Chadwin D. Young, 2013 .

(Invited) Investigation of Critical Interfaces in Few-Layer MoS2 Field Effect Transistors with High-k Dielectrics

Robert M. Wallace, Paul K. Hurley, Chadwin D. Young, 2017 .

Electrical characterization of process induced effects on non-silicon devices

Peng Zhao, Robert M. Wallace, Chadwin D. Young, 2018, 2018 International Conference on IC Design & Technology (ICICDT).

Probing stress effects in HfO2 gate stacks with time dependent measurements

Byoung Hun Lee, Gennadi Bersuker, Peter Zeitzoff, 2005, Microelectron. Reliab..

Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion

X. Wang, Gennadi Bersuker, Durga Misra, 2009, Microelectron. Reliab..

Analyzing noise in modern MOSFETs

Raj Jammy, Dmitry Veksler, G. Bersuker, 2010 .

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks

Gennadi Bersuker, James H. Stathis, Salvatore Lombardo, 2008, Microelectron. Reliab..

(Invited) Evaluation of Few-Layer MoS2 Transistors with a Top Gate and HfO2 Dielectric

Paul K. Hurley, Peng Zhao, Chadwin D. Young, 2016 .

Introduction to the Special Issue on 2008 International Integrated Reliability Workshop (IIRW)

Patrick M. Lenahan, Guoqiao Tao, Alvin W. Strong, 2009 .

Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics

Byoung Hun Lee, Gennadi Bersuker, Peter Zeitzoff, 2004, Microelectron. Reliab..

Electrical characterization and analysis techniques for the high-kappa era

Byoung Hun Lee, Gennadi Bersuker, Rino Choi, 2007, Microelectron. Reliab..

Session 6: Capacitances

Hans Tuinhout, Chadwin D. Young, 2016 .

Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon

Muhammad Mustafa Hussain, Gennadi Bersuker, Jhonathan P. Rojas, 2015, IEEE Transactions on Reliability.

Interfacial layer dependence of HFSIXOy gate stacks on vT instability and charge trapping using ULTRA-short pulse I-V characterization

Byoung Hun Lee, George A. Brown, G. Bersuker, 2005 .

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Husam N. Alshareef, Muhammad Mustafa Hussain, Gennadi Bersuker, 2008 .

Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks

Gennadi Bersuker, Eric M. Vogel, Alain C. Diebold, 2006 .

Hot carrier degradation in HfSiON∕TiN fin shaped field effect transistor with different substrate orientations

Ji-Woon Yang, Hsing-Huang Tseng, Byoung Hun Lee, 2009 .

Experimental study of etched back thermal oxide for optimization of the Si/high-k interface

Howard R. Huff, Byoung Hun Lee, Gennadi Bersuker, 2004 .

The Pulsed I d -V g methodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics

Byoung Hun Lee, Gennadi Bersuker, Rino Choi, 2010 .

The effect of interfacial layer properties on the performance of Hf-based gate stack devices

Patrick M. Lenahan, Byoung Hun Lee, G. Bersuker, 2006 .

Breakdown characteristics of nFETs in inversion with metal/HfO2 gate stacks

G. Bersuker, Rino Choi, Chadwin D. Young, 2008 .

Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance

Howard R. Huff, Byoung Hun Lee, Gennadi Bersuker, 2004 .

Bias Dependence of Total Ionizing Dose Effects in SiGe-MOS FinFETs

En Xia Zhang, Gennadi Bersuker, Ronald D. Schrimpf, 2014, IEEE Transactions on Nuclear Science.

PROGRESSIVE BREAKDOWN CHARACTERISTICSOFHIGH-K/METAL GATE

G. Bersuker, Chadwin D. Young, Dawei Heh, 2007 .

Effects of ALD HfO2 thickness on charge trapping and mobility

Byoung Hun Lee, Dim-Lee Kwong, Gennadi Bersuker, 2005 .

Flexible High-$\kappa$/Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) Fabric

Muhammad Mustafa Hussain, Chadwin D. Young, Jhonathan Prieto Rojas, 2013, IEEE Transactions on Electron Devices.

Charge trapping in MOCVD hafnium-based gate field dielectric stack structures and its impact on device performance

Howard R. Huff, George A. Brown, G. Bersuker, 2003, IEEE International Integrated Reliability Workshop Final Report, 2003.

Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics

Robert M. Wallace, Paul K. Hurley, Chadwin D. Young, 2018, Applied Physics Letters.

Physical comparison of HfO2 transistors with polycrystalline silicon and TiN electrodes

Howard R. Huff, Byoung Hun Lee, G. Bersuker, 2005 .