Shinichiro Hayashi

Gate Drive Circuit with In situ Condition Monitoring System for Detecting Gate Oxide Degradation of SiC MOSFETs

K. Wada, Shinichiro Hayashi, 2022, 2022 IEEE Applied Power Electronics Conference and Exposition (APEC).

Accelerated aging test for gate-oxide degradation in SiC MOSFETs for condition monitoring

K. Wada, Shinichiro Hayashi, 2020 .

Design a Continuous Switching Test Circuit for Power Devices to Evaluate Reliability

Keiji Wada, Shin-Ichiro Hayashi, K. Wada, 2021, IEEJ Journal of Industry Applications.

Accelerated aging for gate oxide of SiC MOSFETs under continuous switching conditions by applying advanced HTGB test

K. Wada, Shinichiro Hayashi, 2021, Microelectronics Reliability.

High-Performance Driving of SiC MOSFETs to Implement Short-Time Operation for Inverter Circuits

K. Wada, Shinichiro Hayashi, 2023, 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia).