Rafael Venegas

High temperature behaviour of GaN-on-Si high power MISHEMT devices

Denis Marcon, Dirk Wellekens, Stefaan Decoutere, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes

Guido Groeseneken, Jie Hu, Stefaan Decoutere, 2014, Microelectron. Reliab..

High frequency characterization and modelling of the parasitic RC performance of two terminal ESD CMOS protection devices

Michiel Steyaert, Steven Thijs, Guido Groeseneken, 2003, Microelectron. Reliab..

Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics

Dirk Wellekens, Marleen Van Hove, Stefaan Decoutere, 2013, IEEE Transactions on Electron Devices.

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2016, IEEE Transactions on Electron Devices.

Stability Evaluation of Insulated Gate AlGaN/GaN Power Switching Devices Under Heavy-Ion Irradiation

Denis Marcon, Marleen Van Hove, Stefaan Decoutere, 2013, IEEE Transactions on Nuclear Science.

Comparison of AlGaN/GaN MISHEMT powerbar designs

Denis Marcon, Stefaan Decoutere, Brice De Jaeger, 2014 .

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Guido Groeseneken, Stefaan Decoutere, Benoit Bakeroot, 2015 .