Gwan-Hyeob Koh

Programming Characteristics of Phase Change Random Access Memory Using Phase Change Simulations

Kinam Kim, Young Tae Kim, Young-Nam Hwang, 2005 .

Ge2Sb2Te5 Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory

Young-Tae Kim, Kinam Kim, Jae-Min Shin, 2005 .

Invited Issues for high density MRAM (先端デバイスの基礎と応用に関するアジアワークショップ)

Gwan-Hyeob Koh, Jang-eun Lee, Yongsoo Kim, 2003 .

Multi-level memory and method of operating the same

Gwan-Hyeob Koh, Daewon Ha, 2008 .

Switching field distribution in magnetic tunnel junctions with a synthetic antiferromagnetic free layer

Gwan-Hyeob Koh, J. H. Park, Kinam Kim, 2005 .

Writing current reduction and total set resistance analysis in PRAM

Dae-Hwan Kang, Gwan-Hyeob Koh, Jeong-Taek Kong, 2008 .

A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15 /spl mu/m technology node and beyond

Gwan-Hyeob Koh, Dae-Won Ha, Kinam Kim, 2000 .

A 0.13 /spl mu/m DRAM technology for giga bit density stand-alone and embedded DRAMs

Gwan-Hyeob Koh, Hyung Soo Uh, Dae-Won Ha, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices

Gwan-Hyeob Koh, Dae-Won Ha, Kinam Kim, 1999 .

Field assisted spin switching in magnetic random access memory

Gwan-Hyeob Koh, J. H. Park, Kinam Kim, 2006 .