M. Van Hove

发表

A new approach for the measurement of resistivity and cross-sectional area of an aluminum interconnect line : principle and applications

Ludo Froyen, Haiwen Li, S Jin, 1998 .

A high-gain coplanar GaAs PHEMT K-band dual-gate amplifier

Dominique Schreurs, Y. Baeyens, Bart Nauwelaers, 1996 .

Reliability and parasitic issues in GaN-based power HEMTs: a review

Gaudenzio Meneghesso, Enrico Zanoni, Stefaan Decoutere, 2016 .

In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)

Denis Marcon, Gustaaf Borghs, J. Das, 2008 .

A novel approach to resistivity and interconnect modeling

Gerald Beyer, Michele Stucchi, M. Van Hove, 2006 .

Influence of surface and grain-boundary scattering on the resistivity of copper in reduced dimensions

Karen Maex, M. Van Hove, Sywert Brongersma, 2004 .

Fast ion beam collinear laser spectroscopy: Some aspects of recent applications, sensitivity and resolution

P. De Bisschop, Gustaaf Borghs, M. Van Hove, 1985 .

Impurity Incorporation during Copper Electrodeposition in the Curvature-Enhanced Accelerator Coverage Regime

Karen Maex, Wilfried Vandervorst, M. Van Hove, 2005 .

Processing damage and electrical performance of porous dielectrics in narrow spaced interconnects

Karen Maex, Herbert Struyf, Michele Stucchi, 2004 .

Dry oxidation mechanisms of copper in trenches

Karen Maex, Bert Verlinden, M. Van Hove, 2002 .

Factors affecting an efficient sealing of porous low-k dielectrics by physical vapor deposition Ta(N) thin films

Karen Maex, Denis Shamiryan, Bert Brijs, 2002 .

Hyperfine interactions in the alkaline-earth Sr ions by collinear fast beam laser spectroscopy

P. De Bisschop, Gustaaf Borghs, M. Van Hove, 1983 .