Naohiro Matsukawa

A new technique for measuring threshold voltage distribution in flash EEPROM devices

Kazunori Masuda, Koji Sakui, Kazushige Kanda, 1995, Proceedings International Conference on Microelectronic Test Structures.

WPM 4.2: A 16ns 1Mb CMOS EPROM

Y. Iyama, Sumio Tanaka, Shigeru Atsumi, 1990 .

Data Retention and Read/Write Characteristics of SEPROM

Jun-ichi Matsunaga, Naohiro Matsukawa, Susumu Kohyama, 1983 .

A 5V-0nly 256K CMOS EEPROM using Barrier Height Lowering Technique

Tetsuya Iizuka, Shigeru Morita, Naohiro Matsukawa, 1985, ESSCIRC '85: 11th European Solid-State Circuits Conference.

A 4-Mbit CMOS EPROM

Tetsuya Iizuka, Y. Kaneko, Jun-ichi Matsunaga, 1987 .

An experimental 5-V-only 256-kbit CMOS EEPROM with a high-performance single-polysilicon cell

Tetsuya Iizuka, Junichi Miyamoto, Shigeru Morita, 1986 .

A 120ns 4Mb CMOS EPROM

Tetsuya Iizuka, Jun-ichi Matsunaga, Sumio Tanaka, 1987, 1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

Selective polysilicon oxidation technology for VLSI isolation

Jun-ichi Matsunaga, Naohiro Matsukawa, Susumu Kohyama, 1982 .

A hot hole-induced low-level leakage current in thin silicon dioxide films

Naohiro Matsukawa, H. Hazama, K. Amemiya, 1996 .