I. Kasatkin

发表

Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial

V. Ulin, D. Kirilenko, V. Chaldyshev, 2022, Materials.

Double Injection at p–n Junctions Based on AlxGa1−xAs

I. Ryzhikov, V. P. Sushkov, I. Kasatkin, 1982 .

High detectivity Pb0.8Sn0.2Te-PbSe0.08Te0.92 heterostructure photodiodes

V. F. Chishko, V. V. Osipov, I. Kasatkin, 1992 .