G. Fladda

发表

Anomalously high yields of elastically scattered 12C-ions from Zr, Hf, Tl, and Hg atoms implanted into silicon

B. Domeij, N. Johansson, G. Fladda, 1970 .

THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON

D. Sigurd, L. Eriksson, K. Björkqvist, 1970 .

Evidence of a replacement reaction between ion implanted substitutional Tl dopants and interstitial Si atoms

E. Rimini, P. Mazzoldi, D. Sigurd, 1969 .

Critical angles for channeling of low energy ions in tungsten

I. Bergström, K. Björkqvist, S. Andersen, 1968 .

LATTICE LOCATION OF DOPANT ELEMENTS IMPLANTED INTO Ge

J. Mayer, A. Fontell, L. Eriksson, 1968 .

LATTICE LOCATION OF HEAVY GROUP III AND V ELEMENTS IMPLANTED INTO Ge.

D. Sigurd, K. Björkqvist, G. Fladda, 1970 .

INFLUENCE OF n‐TYPE DOPANTS ON THE LATTICE LOCATION OF IMPLANTED p‐TYPE DOPANTS IN Si AND Ge

L. Eriksson, K. Björkqvist, G. Fladda, 1969 .

Lattice disorder in germanium by boron ion bombardment

D. Sigurd, L. Eriksson, K. Björkqvist, 1970 .

The use of alpha particle back-scattering for the study of printed and coated layers

L. Eriksson, P. Johansson, G. Fladda, 1972 .