F. Chen

Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

Frederick T. Chen, C. Lin, P. Tzeng, 2008, 2008 IEEE International Electron Devices Meeting.

Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance

Frederick T. Chen, W. H. Liu, H. Y. Lee, 2010, 2010 International Electron Devices Meeting.

Challenges and opportunities for HfOX based resistive random access memory

Frederick T. Chen, H. Y. Lee, Y. S. Chen, 2011, International Electron Devices Meeting.

The highly scalable and reliable hafnium oxide ReRAM and its future challenges

H. Y. Lee, Y. S. Chen, M. Tsai, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.