G. Mariani

Temperature dependence of dislocation efficiency as sinks for self‐interstitials in silicon as measured by gold diffusion

E. Yakimov, B. Pichaud, G. Mariani, 1995 .

Dislocations as sinks for self-interstitials in gold doped silicon

B. Pichaud, G. Mariani, 1992 .

Dislocation–gold interaction in silicon the role of dislocations as sinks for self-interstitials

W. Taylor, B. Pichaud, G. Mariani, 1993 .

Kinetics of impurity gettering on buried defects created by MeV argon implantation

A. Grob, J. Grob, J. Sevely, 1996 .

Investigation of CxSi defects in C implanted silicon by transmission electron microscopy

P. Werner, W. Skorupa, S. Eichler, 1997 .