H. Lim

发表

Magnetoresistance of amorphous indium oxide films on the insulating side near the superconductor-insulator transition

E. Bang, Yun-Il Lee, Young-Kil Kim, 2001 .

Electron distribution and capacitance–voltage characteristics of n-doped quantum wells

Byung-Doo Choe, Hye Jin Lim, H. Shin, 1998 .

Dependence of band gap energy shift of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering on stoichiometry of SiOx and SiNx capping layers

Hye Jin Lim, J. Yu, J. Song, 2002 .

Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers

Y. T. Lee, J. M. Kim, J. Yu, 2004 .

Electrical characterization of partially relaxed InxGa1−xAs/GaAs multiple quantum well structures

Hye Jin Lim, Jeong Seok Lee, C. Moon, 1997 .

Effects of rapid thermal annealing on the optical properties of In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells with InGaAs and dielectric capping layers

Hye Jin Lim, J. Yu, J. Song, 2002 .

Study of charge trapping instabilities in a silicon‐nitride/indium‐phosphide metal‐insulator‐semiconductor structure by the constant‐capacitance method

I. Han, K. Kang, Hye Jin Lim, 1992 .

Duplexer using microwave photonic band gap structure

Hye Jin Lim, I. Park, S. Oh, 2000 .

Effect of oxygen on the electrical and optical properties of In0.5Ga0.5P grown by liquid‐phase epitaxy

In Kim, Byung-Doo Choe, Hye Jin Lim, 1995 .

Difference of interface trap passivation in Schottky contacts formed on (NH4)2Sx-treated GaAs and In0.5Ga0.5P

C. Moon, B. Choe, Seong-Ji Kwon, 1997 .

Thermal stability of sulfur‐treated InP investigated by photoluminescence

Sunoh Kim, I. Han, Eunkyeom Kim, 1996 .

Investigation of electrical properties and stability of Schottky contacts on (NH4)2Sx‐treated n‐ and p‐type In0.5Ga0.5P

H. Kwon, B. Choe, Jung-Ju Lee, 1995 .

Determination of conduction band tail and Fermi energy of heavily Si‐doped GaAs by room‐temperature photoluminescence

Hee-Chul Lee, Jae-Eun Kim, H. Park, 1995 .

Study of defects in GaAs by differential thermal analysis

J. Bourgoin, H. Bardeleben, H. Lim, 1987 .

DYNAMICS OF ANTI-STOKES PHOTOLUMINESCENCE IN TYPE-II ALXGA1-XAS-GAINP2 HETEROSTRUCTURES : THE IMPORTANT ROLE OF LONG-LIVED CARRIERS NEAR THE INTERFACE

Hye Jin Lim, J. I. Lee, Yong‐Hoon Cho, 1997 .

Tunable omnidirectional reflection bands and defect modes of a one-dimensional photonic band gap structure with liquid crystals

Hye Jin Lim, C. Kee, Y. Ha, 2001 .

Characteristics of electron traps in In0.5Ga0.5P generated by recombination enhanced defect reactions

Chunjoong Kim, Jong-Cheol Lee, B. Choe, 1993 .

Interface states generated by heat treatment in Au/InGaP Schottky diodes

Hye Jin Lim, Hyung Jae Lee, Junil Lee, 1992 .

Recombination dynamics in n-AlxGa1−xAs/n-In0.5Ga0.5P type-II heterostructures

J. I. Lee, Yong‐Hoon Cho, B. Choe, 1998 .

Interface properties of (NH4)2Sx‐treated In0.5Ga0.5P Schottky contacts

Hye Jin Lim, H. Kwon, B. Choe, 1995 .

Chemical trends of S‐, Se‐, and Te‐related DX centers in InGaP

H. Kwon, B. Choe, H. Lim, 1995 .

Superior characteristics of organic chalcone single crystals as efficient nonlinear optical material

H. J. Ravindra, Hye Jin Lim, F. Rotermund, 2008 .

Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries

Jae Su Yu, Y. T. Lee, Hye Jin Lim, 2005 .

Influence of dielectric deposition parameters on the In0.2Ga0.8As/GaAs quantum well intermixing by impurity-free vacancy disordering

Jin Dong Song, Jae Su Yu, Hye Jin Lim, 2002 .

Interface states in In0.5Ga0.5P/AlxGa1−xAs heterostructures grown by liquid phase epitaxy

You Young Kim, Hye Jin Lim, Yong‐Hoon Cho, 1997 .

PROPERTIES OF ELECTRON TRAPS IN IN1-XGAXASYP1-Y GROWN ON GAAS0.61P0.39

H. Kwon, B. Choe, H. Lim, 1997 .

Effects of donor doping on deep traps in In0.5Ga0.5P grown by liquid phase epitaxy

H. Kwon, B. Choe, H. Lim, 1995 .

Group‐VI impurity‐related DX centers in In0.18 Ga0.82As0.28 P0.72

H. Kwon, B. Choe, Seong-Ji Kwon, 1996 .

Variable-temperature scanning capacitance microscopy: A way to probe charge traps in oxide or semiconductor

Chohui Kim, Y. Kuk, I. Yoon, 2001 .

Interface properties and capacitance‐voltage behavior of indium phosphide metal‐insulator‐semiconductor prepared by plasma‐assisted oxidation

K. Kang, Hwanjoo Park, J. I. Lee, 1991 .

Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy

Sunoh Kim, I. Han, Eunkyeom Kim, 1997 .

Spatial resolution of capacitance-voltage profiles in quantum well structures

C. Moon, B. Choe, Seong-Ji Kwon, 1998 .

Influence of carrier flow on the temperature‐dependent capacitance‐voltage profiles of heterojunction structures

H. Shin, B. Choe, Seong-Ji Kwon, 1996 .