V. Avrutin

Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates

T. Yugova, N. Izyumskaya, V. Vdovin, 1999 .

Causes of cracking of vacuum deposited thick amorphous silicon film

A. Andreeva, N. Melnik, A. Vyatkin, 1996 .

Control over strain relaxation in Si-based heterostructures

N. Izyumskaya, A. Vyatkin, V. Avrutin, 2004 .

MBE Growth of the top Layer in Si/YSZ/Si Structure

N. Izyumskaya, A. Akimov, L. P. Kazanskii, 2002 .

Low-temperature relaxation of elastic stresses in SiGe/Si heterostructures irradiated with Ge+ ions

T. Yugova, N. Izyumskaya, D. Irzhak, 2004 .

Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge+ ions

T. Yugova, N. Izyumskaya, D. Roshchupkin, 2003 .

Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers

T. Yugova, V. Egorov, N. Izyumskaya, 2000, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).

Low-temperature strain relaxation in ion-irradiated pseudomorphic SiGe/Si structures

T. Yugova, N. Izyumskaya, D. Roshchupkin, 2002 .

Gallium-doped zinc oxide: nonlinear reflection and transmission measurements and modeling in the ENZ region

Ü. Özgür, B. Diroll, N. Kinsey, 2022, Journal of Physics: Photonics.