V. Ban

发表

Epitaxial growth and properties of semiconducting ScN

J. Dismukes, V. S. Ban, W. M. Yim, 1972 .

Mass‐Spectrometric Study of the Laser‐Induced Vaporization of Compounds of Bismuth with the Elements of Group VIa

B. E. Knox, V. Ban, 1970 .

Vaporization of antimony and tellurium in the vicinity of the critical point.

B. E. Knox, V. Ban, 1969 .

III-2 – Chemical Vapor Deposition of Inorganic Thin Films

W. Kern, V. S. Ban, V. Ban, 1978 .

Wavelength stabilization and spectrum narrowing of high-power multimode laser diodes and arrays by use of volume Bragg gratings.

E. D. Melnik, V. S. Ban, B. Volodin, 2004, Optics letters.

Use of thin carbon films for selective chemical etching and epitaxial deposition of III‐V semiconductors

G. Olsen, V. S. Ban, V. Ban, 1976 .

Mass spectrometric and thermodynamics studies of the CVD of some III–V compounds

V. S. Ban, V. Ban, 1972 .

Chemical Processes in Vapor Deposition of Silicon II . Deposition from and

V. Ban, 1975 .

Chemical processes in vapor deposition of silicon. I. Deposition from dichlorosilane and etching by hydrochloric acid

V. S. Ban, Stephen L. Gilbert, V. Ban, 1975 .

The chemistry and transport phenomena of chemical vapor deposition of silicon from SiCl4

Stephen L. Gilbert, V. Ban, 1975 .

Novel reactor for high volume low-cost silicon epitaxy

V. Ban, 1978 .

Organic Vapor Phase Deposition

S. Forrest, M. Baldo, V. S. Ban, 1998 .

Organic vapor phase deposition: a new method for the growth of organic thin films with large optical non-linearities

Stephen R. Forrest, Vladimir S. Ban, J. L. Forrest, 1995 .

Transport Phenomena Measurements in Epitaxial Reactors

Vladimir S. Ban, V. Ban, 1978 .

Thin films of semiconductors and dielectrics produced by laser evaporation

D. A. Kramer, V. Ban, 1970 .

Mass spectrometric study of processes in the closed tube vapor growth of CdS and ZnS

E. White, V. Ban, 1976 .

Low pressure organic vapor phase deposition of small molecular weight organic light emitting device structures

Stephen R. Forrest, Vladimir S. Ban, Mark E. Thompson, 1997 .

Reduction of 1/f noise in multiplexed linear In/sub 0.53/Ga/sub 0.47/As detector arrays via epitaxial doping

G. Olsen, A. Joshi, M. Lange, 1993 .

Mass Spectrometric Studies of Vapor‐Phase Crystal Growth II .

V. S. Ban, V. Ban, 1971 .

Macroscopically ordered thin films of an organic salt grown by low-pressure organic vapor-phase deposition

S. Forrest, V. S. Ban, M. Deutsch, 1999 .

Langmuir evaporation from the (100), (111A), and (111B) faces of GaAs

Vladimir S. Ban, B. Goldstein, Bernard R. Goldstein, 1976 .

Influence of Deposition Temperature on Composition and Growth Rate of GaAsx P1−x Layers

J. Tietjen, H. Gossenberger, V. Ban, 1972 .

Mass-spectrometric study of the laser-induced vaporization of compounds of arsenic and antimony with the elements of group VIA

V. S. Ban, B. E. Knox, V. Ban, 1970 .

Mass spectra of silicon containing industrial gases

V. Ban, 1975 .

Intense second harmonic generation and long‐range structural ordering in thin films of an organic salt grown by organic vapor phase deposition

S. Forrest, V. S. Ban, A. Stroustrup, 1996 .

Selective Epitaxy of III–V Compounds by Low‐Temperature Hydride VPE

G. Olsen, S. Mason, V. Ban, 1990 .

Dark current analysis and characterization of In/sub x/Ga/sub 1-x/As/InAs/sub y/P/sub 1-y/ graded photodiodes with x>0.53 for response to longer wavelengths (>1.7 mu m)

Vladimir S. Ban, Walter F. Kosonocky, G. H. Olsen, 1992 .

Mass spectrometric studies of laser-induced vaporization. II - The bismuth-selenium system.

B. E. Knox, V. Ban, 1968 .

Incorporation of phosphorus during gas phase epitaxy

J. Flemish, K. Jones, V. Ban, 1992 .

Determination of the composition of strained InGaAsP layers on InP substrates using photoreflectance and double‐crystal x‐ray diffractometry

Hongen Shen, M. Dutta, V. S. Ban, 1991 .

Altering the Composition of InGaAsP Grown by the Hydride Technique by Introducing HCl Downstream

A. Tripathi, J. Flemish, K. Jones, 1991 .

Characterization of process-induced defects in 2.6-μm InGaAs photodiodes

Abhay M. Joshi, Vladimir S. Ban, Natko B. Urli, 1993, Other Conferences.

An Analysis of the Gas-Flow Dynamics in a Horizontal CVD Reactor

S. Berkman, N. Goldsmith, V. Ban, 1978 .

Process characterization and evaluation of hydride VPE grown GaxIn1−xAs using a Ga/In alloy source

G. Olsen, Chinho Park, T. Anderson, 1992 .

Modeling of nonideal volume Bragg reflection gratings in photosensitive glass using a perturbed transmission matrix approach

E. D. Melnik, S. Forrest, V. S. Ban, 2004, IEEE Journal of Quantum Electronics.

Room-Temperature InGaAs Detector Arrays For 2.5 µm

G. A. Gasparian, G. H. Olsen, S. M. Mason, 1990, Optics & Photonics.

1024-element linear InxGa1-xAs/InAsyP1-y detector arrays for environmental sensing from 1 um to 2.6 um

Abhay M. Joshi, Krishna Rao Linga, Vladimir S. Ban, 1993, Optics & Photonics.

Multiplexed 256 Element Ingaas Detector Arrays For 0.8-1.7 um Room-Temperature Operation

G. A. Gasparian, E. Mykietyn, K. M. Woodruff, 1988, Optics & Photonics.

Room temperature glow discharge deposition of silicon oxides from SiH4 and N2O

G. Kaganowicz, V. S. Ban, J. Robinson, 1984 .