A. Hombe

Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon

Y. Kurokawa, N. Usami, M. Shaleev, 2018 .

Novel light trapping structure by alkaline etching using a Ge dot mask for crystalline Si solar cells

Y. Kurokawa, N. Usami, A. Hombe, 2016, 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).

Application of light trapping structure using Ge dot mask by alkaline etching to heterojunction solar cell

Y. Kurokawa, N. Usami, K. Gotoh, 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).

Fabrication of light-trapping structure by selective etching of thin Si substrates masked with a Ge dot layer and nanomasks

Y. Kurokawa, N. Usami, K. Gotoh, 2018, Japanese Journal of Applied Physics.

Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks

Y. Kurokawa, N. Usami, A. Novikov, 2018, Japanese Journal of Applied Physics.

Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

Y. Kurokawa, N. Usami, M. Shaleev, 2017 .