C. A. Londos

Novel aspects of oxygen diffusion in silicon

N. G. Semaltianos, R. Newman, M. J. Binns, 1996 .

Infrared study of defects in nitrogen-doped electron irradiated silicon

A. Chroneos, C. A. Londos, E. Sgourou, 2016, Journal of Materials Science: Materials in Electronics.

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Alexander Chroneos, E. N. Sgourou, A. Chroneos, 2014, Journal of Materials Science: Materials in Electronics.

Impact of isovalent defect engineering strategies on carbon-related clusters in silicon

A. Chroneos, C. A. Londos, E. Sgourou, 2013, Journal of Materials Science: Materials in Electronics.

Relative concentrations of carbon related defects in silicon

R. Vovk, A. Chroneos, D. Parfitt, 2016, Journal of Materials Science: Materials in Electronics.

Controlling A-center concentration in silicon through isovalent doping: mass action analysis

R. Vovk, A. Chroneos, D. Parfitt, 2016, Journal of Materials Science: Materials in Electronics.

Oxygen-vacancy defects in electron-irradiated Si: the role of carbon in their behavior

A. Chroneos, C. A. Londos, E. Sgourou, 2014, Journal of Materials Science: Materials in Electronics.

Strategies to suppress A-center formation in silicon and germanium from a mass action analysis viewpoint

R. Vovk, A. Chroneos, C. A. Londos, 2014, Journal of Materials Science: Materials in Electronics.